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- Helmut Baumgart
- Professor
- Electrical & Computer Engineering
- Applied Research Ctr
-
Newport News,
VA
23606
- 757-269-7710
- hbaumgar@odu.edu
- Web Page
- Dr. Baumgart received his B.S. degree in physics from the University of Heidelberg, Germany, his M.S. degree in physics from
Purdue University in Indiana, where he attended graduate school as a Fulbright Scholar, and his Ph.D. degree in semiconductor
physics from the University of Stuttgart, Germany, while performing his Ph.D. research at the Max-Planck Institute of Solid
State Research in Stuttgart. Following graduation he has held numerous R&D positions in the microelectronics industry.
-
Education
- University of Stuttgart and Max-Planck Institute of Solid State, Research,
1981
- Major: Physics
- Degree: Ph. D.
- Purdue University,
1977
- Major: Physics
- Degree: M.S.
- University of Heidelberg,
1974
- Major: Physics
- Degree: B.S.
-
Books
- (2010). Semiconductor Wafer Bonding XI: Science, Technology and Applications. ECS Transactions, The Electrochemical Society.
- Baumgart, H. (2008). Semiconductor Wafer Bonding 10: Science, Technology and Applications. ECS Transactions, The Electrochemical Society.
- Baumgart, H. (2006). Semiconductor Wafer Bonding 9: Science, Technology and Applications. ECS Transactions,The Electrochemical Society.
- Baumgart, H. (2005). Semiconductor Wafer Bonding VIII: Science, Technology and Applications. The Electrochemical Society.
- Baumgart, H. (2003). Semiconductor Wafer Bonding VII: Science, Technology and Applications. The Electrochemical Society.
- Baumgart, H. (2002). Semiconductor Wafer Bonding VI: Science, Technology and Applications. The Electrochemical Society.
- Baumgart, H. (2001). Semiconductor Wafer Bonding V: Science, Technology and Applications. The Electrochemical Society.
- Baumgart, H. (1998). Semiconductor Wafer Bonding IV: Science, Technology and Applications. The Electrochemical Society.
- Baumgart, H. (1995). Semiconductor Wafer Bonding III: Physics and Applications. The Electrochemical Society.
- Baumgart, H. (1993). Semiconductor Wafer Bonding II: Science, Technology and Applications. The Electrochemical Society.
-
Articles
- Ai, Y., Yalcin, S., Gu, D., Baysal, O., Baumgart, H., Qian, S., and Beskok, A. (2010). A Low Voltage Nano-Porous Electroosmotic Pump. J. Colloid and Interface Science, 350, (pp. 465).
- Tapily, K., Gu, D., Baumgart, H., Namkoong, G., Stegall, D., and Elmustafa, A. Mechanical Characterization of ALD Zinc Oxide by Nanoindentation. Journal of Vacuum Technology B
- Gu, D., Baumgart, H., Tapily, K., Shrestha, P., Namkoong, G., Ao, X., and Muller, F. Method for Precise Control of Three-Dimensional Structural Parameters of Highly Ordered Arrays of Nested Semiconductor/Metal
Nanotubes. Advanced Materials
- Tapily, K., Jakes, J., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Nanomechanical Study of Amorphous and Polycrystalline ALD HfO2 Thin Films. Intl. Journal of Surface Science and Engineering
- Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (2010). Synthesis of Nested Coaxial Multiple Walled Nanotubes by Atomic Layer Deposition. ACS Nano, 4, (pp. 753-758).
- Gu, D., Baumgart, H., Namkoong, G., and Abdel-Fattah, T. (2009). Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication. Electrochemical and Solid-State Letters, 12 (4), (pp. K25-K28).
- Shrestha, P., Tapily, K., Gu, D., and Baumgart, H. (2009). Characterization of ALD HfO2 on strained Silicon Grown on Si0.8Ge0.2-Silicon Substrates. J. Electrochem. Soc.
- Jakes, J. E., Frihart, C. R., Beecher, J. F., Moon, R. J., Resto, P. J., Melgarejo, Z. H., Sua’rez, O. M., Baumgart, H., Elmustafa, A., and Stone, D. S. (2009). Nanoindentation near the edge. Journal of Materials Research, 24 (3), (pp. 1016-1031).
- Tapily, K., Shrestha, Gu, P. D., Baumgart, H., and Elmustafa, A. (2009). Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting. Japanese Journal of Applied Physics, 48, (pp. 101202-1-101202-4).
- Zhu, X., Gu, D., Li, Q., Ioannou, D., Baumgart, H., Suehle, J., and Richter, C. (2009). Silicon Nanowire Non-Volatile Memory with High-k Gate Dielectric Stack. Microelectron. Eng., 86, (pp. 1957).
- Gu, D., Baumgart, H., Zhu, M., and Celler, G. (2009). Size and Thickness Effect on the local Strain Relaxation in Patterned Silicon-on-Insulator. Electrochem. and Solid-State Lett., 12 (4),
- Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (2009). Synthesis of Tube-in-Tube Nanostructures of Metal Oxides by Template Replication. Nano Letters
- Gu, D., Tapily, K., Shrestha, P., Zhu, M., Celler, G., and Baumgart, H. (2008). Experimental Study of ALD HfO2 Deposited on Strained Silicon-on-Insulator and Standard SOI. J. Electrochem. Soc., 155 (6), (pp. G129 – G133).
- Tapily, K., Jakes, J. E., Stone, D. S., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. A. (2008). Nanoindentation Investigation of HfO2 and Al2O3 Films Grown by Atomic Layer Deposition. J. Electrochem. Soc., 155 (7), (pp. H545 – H551).
- Abdel-Fattah, T. M., Gu, D., Baumgart, H., and Namkoong, G. (2008). Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template Method. ECS Transactions, 16 (4), (pp. 159-164).
- Gu, D., Tapily, K., Shrestha, P., Celler, G., and Baumgart, H. (2007). Experimental Study of Atomic Layer Deposition (ALD) HfO2 Deposited on Strained Silicon-on-Insulator (sSOI) & extra strained
(xsSOI) and SOI. ECS Transactions, 11 (4), (pp. 421-429).
- Tapily, K., Jakes, J., Stone, D. S., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. A. (2007). Nanomechanical Properties of High-k Dielectrics Grown by Atomic Layer Deposition. ECS Transactions, 11 (7), (pp. 123-130).
- Miller, N., Tapily, K., Baumgart, H., Elmustafa, A. A., Celler, G., and Brunier, F. (2007). Nanomechanical Properties of Strained Silicon-on-Insulator (sSOI) Films Epitaxially grown on Si1-xGex and Layer Transferred
by Wafer Bonding. Mater. Res. Soc. Symp. Proc., 1021E (5),
- Thitsa, M., Gu, D., Baumgart, H., and Albin, S. (2007). Tuning the absolute Bandgap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers. ECS Trans., 11 (7), (pp. 259-267).
- Baumgart, H., Letavic, T. J., De Wolf, I., Tsou, L., Maes, H., and Egloff, R. (1995). Analysis of Process-Induced Stresses in Lateral SOI Trench Isolation Structures for High Voltage Devices in Bonded SOI. ECS Proceedings , The Electrochemical Society, 95 (7), (pp. 440-454).
- Egloff, R., Letavic, T. J., Merchant, S., Greenberg, B., and Baumgart, H. (1995). Evaluation of Strain Sources in Bond and Etch-back Silicon-on-Insulator. ECS Proceedings , The Electrochemical Society, 95 (7), (pp. 236-251).
- Egloff, R., Letavic, T., Greenberg, B., and Baumgart, H. (1995). Evaluation of Strain Sources in Bond and Etchback Silicon-on-Insulator. Philips Journal of Research, 49 (1/2), (pp. 125-138).
- Baumgart, H., Letavic, T., and Egloff, R. (1995). Evaluation of Wafer Bonding and Etch Back for SOI Technology. Philips Journal of Research, 49 (1/2), (pp. 91-124).
- Maszara, W., Jiang, B., Yamada, A., Rozgonyi, G., Baumgart, H., and de Kock, A. R. (1991). Role of Surface Morphology in Wafer Bonding. J. Appl. Phys., 69 (1), (pp. 257).
- Baumgart, H., and van Ommen, A. (1989). Current Status of the Technology of Silicon Separated by Implantation of Oxygen ( SIMOX ). Materials Science and Engineering, B2 (1-3), (pp. 111).
- Krumme, J., Doorman, V., Hansen, P., Baumgart, H., Petruzzello, J., and Viegers, M. A. (1989). Optical Recording Aspects of RF Sputtered Iron Garnet Films. J. Appl. Phys., 66(9), (pp. 4393).
- Olego, D., and Baumgart, H. (1988). Raman Scattering Characterization of the Microscopic Structure of Semi-Insulating Polycrystalline Si ( SIPOS ) Films. J. Appl. Phys., 63 (8), (pp. 2669).
- Olego, D., Baumgart, H., and Celler, G. (1988). Strains in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Raman Scattering Characterization. Appl. Phys. Lett., 52 (6), (pp. 483).
- Theunissen, M. J., Baumgart, H., Haisma, J., Mulder, J. L., and Rutten, W. M. (1988). Substrate Damage Prevention and Simultaneous Zone-Melt Recrystallization in Stacked SOI Layers. J. Appl. Phys., 27 (10), (pp. L 1938).
- Arnold, E., Baumgart, H., Khan, B., and Ramesh, S. (1987). Laser Beam-Induced Recrystallization of Silicon and its Application to Silicon-on-Insulator Technology. Philips Journal of Research, 42 (3), (pp. 253).
- Landmann, U., Luedtke, W., Barnett, R., Cleveland, C., Ribarsky, M., Arnold, E., Ramesh, S., Baumgart, H., Martinez, A., and Khan, B. (1986). Faceting at the Silicon (100 ) Crystal Melt Interface: Theory and Experiment. Phys. Review Letters, 56 (2), (pp. 155).
- Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., and Phillipp, F. (1983). SIMS Investigation of P-N Junction Quality in Ion Implanted CW Laser Annealed Silicon. Fresenius Zeitschrift fuer Analytische Chemie, 313 (3), (pp. 303).
- Leamy, H., Chang, C., Baumgart, H., Lemons, R., and Cheng, J. (1982). Cellular Growth in Micro-Zone Melted Silicon. Materials Letters, 1, (pp. 33).
- Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., and Phillipp, F. (1982). Electrical and Structural Properties of p-n Junctions in CW Laser Annealed Silicon. J. Appl. Phys., 53 (8), (pp. 5904).
- Baumgart, H., Leamy, H., Celler, G., and Trimble, L. (1982). Grain Boundary Diffusion in Polycrystalline Silicon Films on SiO2. J. de Physique, Colloque C, Suppl. 10, 43 (C-1), (pp. 363).
- Chang, S., Queisser, H., Baumgart, H., Hagen, W., and Hartmann, W. (1982). High Resolution Real Time X-Ray Topography of Dislocation Generation in Silicon. Philosophical Magazine A, 46 (6), (pp. 1009).
- Merkle, K., Baumgart, H., Uebbing, R., and Phillipp, F. (1982). Picosecond Laser Pulse Irradiation of Crystalline Silicon. Appl. Phys. Lett., 40 (8), (pp. 729).
- Celler, G., Trimble, L., Ng, K., Leamy, H., and Baumgart, H. (1982). Seeded Oscillatory Growth of Silicon over SiO2 by CW Laser Irradiation. Appl. Phys. Lett., 40 (12), (pp. 1043).
- Maier, M., Bimberg, D., Baumgart, H., and Phillipp, F. (1982). SIMS Investigation of p-n Junction Quality in Ion Implanted CW Laser Annealed Silicon. Secondary Ion Mass Spectroscopy SIMS III, Springer Series in Chemical Physics, 19, (pp. 336).
- Baumgart, H., Phillipp, F., Rozgonyi, G., and Gosele, U. (1981). Slip Dislocation Formation During CW Laser Annealing of Silicon. Appl. Phys. Lett., 38 (2), (pp. 95).
- Baumgart, H., Markewitz, G., and Hartmann, W. (1980). A Novel High Temperature Tensile Stage for Live X-ray Topography. J. Appl. Cryst., 13, (pp. 601).
- Baumgart, H., Rozgonyi, G., Uebbing, R., and Phillipp, F. (1980). Laser Annealing of Silicon: Strain and Perfection of Epitaxially Reconstructed Surfaces. J. Phys. Soc. Japan, 49 (A), (pp. 1291).
- Uebbing, R., Wagner, P., Baumgart, H., and Queisser, H. (1980). Luminescence in Slipped and Dislocation-Free Laser Annealed Silicon. Appl. Phys. Letters, 37 (12), (pp. 1078).
- Rozgonyi, G., and Baumgart, H. (1980). Time Dependence of the Nucleation of Slip Dislocations During Laser Annealing of Silicon. Journal de Physique, Suppl. 5, 41 (C4), (pp. 85).
-
Presentations
- Nanotechnology Engineering utilizing Template Replication
- Conference Name:
- Location: Tokyo, Japan
- Date: March 5, 2011
- Authors/Presenters:
Baumgart, H.
- Sacrificial Spacer Technology for Free-Standing Multiple Nested ALD Nanotubes
- Conference Name: The American Vacuum Society
- Sponsoring Organization: The American Vacuum Society
- Location: Seoul, Korea
- Date: 2010
- Authors/Presenters:
Gu, D.
Baumgart, H.
Abdel-Fattah, T.
Namkoong, G.
- Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology
- Conference Name:
- Location: Hamburg, Germany
- Date: 2010
- Authors/Presenters:
Baumgart, H.
- RF and Structural Characterization of SRF thin Films
- Conference Name:
- Location: Kyoto, Japan
- Date: 2010
- Authors/Presenters:
Valente-Feliciano, A.
Phillips, H.
Reece, C.
Spradlin, J.
Zhao, X.
Gu, D.
Baumgart, H.
Beringer, D.
Lukaszew, R.
Xiao, B.
Seo, K.
- Hall Effect, DLTS and C-V Characterization of ALD HfO2 and ZnO Thin Films
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Raj, A.
Rozgonyi, G.
Gu, D.
Baumgart, H.
- Thermal Behavior of the Mechanical Properties of GaN throughout Hydrogen-Induced Thin Film Layer Transfer
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Moutanabbir, O.
Gu, D.
Baumgart, H.
Elmustafa, A.
- Controlled Synthesis of ZnO Nanospheres using Hydrothermal Process
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Foe, K.
Boland, P.
Gu, D.
Baumgart, H.
Abdel-Fattah, T.
Jeong, J.
Namkoong, G.
- Electrophoretic Light Scattering for Surface Zeta Potential Measurement of ALD Metal Oxide Films
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Gu, D.
Yalcin, S.
Baumgart, H.
Qian, S.
Baysal, O.
Beskok, A.
- Investigation of Volmer-Weber Growth during the Nucleation Phase of ALD Platinum Thin Films and Template based Platinum Nanotubes
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Shrestah, P.
Gu, D.
Tran, N.
Tapily, K.
Baumgart, H.
Namkoong, G.
- Raman Spectroscopy of ZnO Thin Films by Atomic Layer Deposition
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Gu, D.
Baumgart, H.
Rigo, M.
Seo, J.
- Frank van der Merwe Growth Mechanism of ALD ZnO studied by X-ray Diffraction
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Gu, D.
Baumgart, H.
- Synthesis of NbN Thin Films for Superconducting Radiofrequency (SRF) Applications by Atomic Layer Deposition to Fabricate
Superconductor-Insulator-Superconductor (S-I-S) Multilayer Structures
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Gu, D.
Tapily, K.
Baumgart, H.
Namkoong, G.
- Gold Functionalized ALD Grown ZnO Nanotubes
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Abdel-Fattah, T.
Tapily, K.
Gu, D.
Baumgart, H.
- Capacitance and Interface State Density of Metal/HfO2/SiNW Capacitor Arrays
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Li, Q.
Zhu, X.
Gu, D.
Baumgart, H.
Suehle, J.
Richter, C.
- Estimation of Organic Tandem Solar Cell Power Conversion Efficiency via Optical Simulation Methods
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Boland, P.
Foe, K.
Gu, D.
Baumgart, H.
Lee, K.
Namkoong, G.
- Finite Element Modeling and Raman Study of Strain Distribution in Patterned Device Islands on Strained Silicon-on-Insulator
(sSOI) Substrates
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Gu, D.
Baumgart, H.
nauman, F.
Petzold, M.
- Hydrogen Ion-Induced AlN Thin Layer Transfer: An Elastomechanical Study
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Moutanabbir, O.
Abdullah, M.
Gu, D.
Baumgart, H.
Elmustafa, A.
- Y2O3 Red Phosphors for General Lighting Coated by Atomic Layer Deposition (ALD) of ZnO for Enhanced Efficacy, Lifetime, and
Thermal Stability
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Las Vegas, NV
- Date: 2010
- Authors/Presenters:
Tapily, K.
Gu, D.
Baumgart, H.
Hunt, C.
- Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology
- Conference Name:
- Location: Hamburg, Germany
- Date: September, 2010
- Authors/Presenters:
Baumgart, H.
- Atomic Layer Deposition for Nanotechnology Applications
- Conference Name:
- Location: Kiel, Germany
- Date: September, 2010
- Authors/Presenters:
Baumgart, H.
- Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology
- Conference Name:
- Location: Halle, Germany
- Date: September, 2010
- Authors/Presenters:
Baumgart, H.
- Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology
- Conference Name:
- Location: Konstanz, Germany
- Date: September, 2010
- Authors/Presenters:
Baumgart, H.
- Atomic Layer Deposition of NbN Thin Films for Superconducting Radiofrequency (SRF) Cavities
- Conference Name:
- Location: Seoul
- Date: June, 2010
- Authors/Presenters:
Gu, D.
Xiao, B.
Baumgart, H.
Namkoong, G.
Crooks, R.
- Investigation of the Nucleation of ALD Platinum Films
- Conference Name:
- Location: Seoul
- Date: June, 2010
- Authors/Presenters:
Gu, D.
Tran, N.
Tapily, K.
Shrestha, P.
Baumgart, H.
Namkoong, G.
- Sacrificial Spacer Technology for Free-Standing Multiple Nested ALD Nanotubes
- Conference Name:
- Location: Seoul
- Date: June, 2010
- Authors/Presenters:
Gu, D.
Baumgart, H.
Abdel-Fattah, T.
Namkoong, G.
- Atomic Layer Deposition of Platinum thin Films and Template Based ALD Platinum Nanotubes
- Conference Name:
- Location: Manassas, Virginia
- Date: May 27, 2010
- Authors/Presenters:
Baumgart, H.
- ALD Synthesis of Nested Coaxial Multiple Walled Nanotubes by Template Replication
- Conference Name: Thomas Jefferson Lab
- Sponsoring Organization: Thomas Jefferson Lab
- Location: Newport News, VA
- Date: April, 2010
- Authors/Presenters:
Shrestha, P.
Gu, D.
Baumgart, H.
Namkoong, G.
Abdel-Fattah, T.
- Atomic Layer Deposition (ALD) of Platinum Thin Films and Template based Pt Nanotubes
- Conference Name: Thomas Jefferson Lab
- Sponsoring Organization: Thomas Jefferson Lab
- Location: Newport News, VA
- Date: April, 2010
- Authors/Presenters:
Tapily, K.
Tran, N.
Gu, D.
Baumgart, H.
- Atomic Layer Deposition (ALD) of high-k Dielectric Films for Si Nanowire Nonvolatile Memory Devices and for Microfluidic Applications
- Conference Name: Physics Department, Hampton University
- Sponsoring Organization: Physics Department, Hampton University
- Location: Hampton, VA
- Date: February 4, 2010
- Authors/Presenters:
Baumgart, H.
- Understanding Strain and Strain Relaxation during Layer Transfer and Patterning in Wafer Bonding
- Conference Name: University of Tokyo
- Sponsoring Organization: University of Tokyo
- Location: Tokyo, Japan
- Date: January 20, 2010
- Authors/Presenters:
Baumgart, H. Presenter & Author
- Understanding Strain and Strain Relaxation during Layer Transfer and Patterning in Wafer Bonding
- Conference Name:
- Location: University of Tokyo, Hongo, Tokyo, Japan
- Date: January 20, 2010
- Authors/Presenters:
Baumgart, H.
- Atomic Layer Deposition for Nanotechnology Fabrication with Applications in Microelectronics, Biosensors and Microfluidics
- Conference Name: University of Tokyo
- Sponsoring Organization: University of Tokyo
- Location: Tokyo, Japan
- Date: January 18, 2010
- Authors/Presenters:
Baumgart, H.
- Atomic Layer Deposition for Nanotechnology Fabrication with Applications in Microelectronics, Biosensors and Microfluidics
- Conference Name:
- Location: Tokyo, Japan
- Date: January 18, 2010
- Authors/Presenters:
Baumgart, H.
- Investigation of Strain Relaxation in Patterned Strained Silicon-on-Insulator Structures by Raman Spectroscopy and Computer
Simulation
- Conference Name:
- Location: College Park, Maryland
- Date: December, 2009
- Authors/Presenters:
Gu, D.
Naumann, F.
Petzold, M.
Zhu, M.
Baumgart, H.
- Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness
- Conference Name:
- Location: College Park, MD
- Date: December, 2009
- Authors/Presenters:
Zhu, X.
Li, Q.
Ioannou, D.
Gu, D.
Baumgart, H.
Bonevich, J.
Suehle, J.
Richter, C.
- Synthesis and Assembly of ZnO Nanorods Grown by ALD for Biosensor Application
- Conference Name:
- Location: College Park, MD
- Date: December, 2009
- Authors/Presenters:
Bajpai, R.
Zaghloul, M.
Gu, D.
Baumgart, H.
Abdel-Fattah, T.
- Nanotube/Nanorods Fabrication of ZnO Using Atomic Layer Deposition and the Template Replication Method
- Conference Name:
- Location: College Park, Maryland
- Date: December, 2009
- Authors/Presenters:
Gu, D.
Tapily, K.
Shrestha, P.
Baumgart, H.
- Optimization of Active Layer Thickness in Planar Organic Solar Cells via Optical Simulation Methods
- Conference Name:
- Location: College Park, Maryland
- Date: December, 2009
- Authors/Presenters:
Boland, p.
Abdel-Fattah, T.
Baumgart, H.
Namkoong, G.
- Si Nanowire MOSFET with Gate-All-Around Electrode
- Conference Name:
- Location: College Park, Maryland
- Date: December, 2009
- Authors/Presenters:
Ndoye, C.
Liu, T.
Orlowski, M.
Gu, D.
Tran, N.
Baumgart, H.
- Silicon Nanowire Non Volatile Memory with High-k Gate Dielectric Stack
- Conference Name:
- Location: Cambridge, UK
- Date: 2009
- Authors/Presenters:
Zhu, X.
Gu, D.
Li, Q.
Ioannou, D.
Baumgart, H.
Suehle, J.
Richter, C.
- Atomic Layer Deposition (ALD) for Gate Stack Engineering and for Microfluidics and Sensor Applications
- Conference Name:
- Location: North Carolina State University, Raleigh, North Carolina
- Date: November 24, 2009
- Authors/Presenters:
Baumgart, H.
- ALD Synthesis of Tube-in-Tube Nanostructures of Transition Metal Oxides by Template Replication
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Gu, D.
Shrestha, P.
Baumgart, H.
Abdel-Fattah, T.
Namkoong, G.
- Self-organized Crystal Growth of Nanostructured ZnO Morphologies by Hydrothermal Synthesis
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Foe, K.
Boland, P.
Namkoong, G.
Gu, D.
Baumgart, H.
Abdel-Fattah, T.
- Optimizing the Release of ALD Transition Metal Oxide Nanotubes from Anodic Aluminum Oxide Templates
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Abdel-Fattah, T.
Gu, D.
Baumgart, H.
Namkoong, G.
- C-V and Deep Level Transient Spectroscopy (DLTS) of ALD HfO2 on s-Si/SiGe/Si: Effects of strained-Si Thickness and Surface
Nitridation
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Yu, L.
Rozgonyi, G.
Shrestha, P.
Gu, D.
Baumgart, H.
- Application of ALD high-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Zhu, X.
Gu, D.
Li, Q.
Baumgart, H.
Ioannou, D.
Suehle, J.
Richter, C.
- Modeling and Characterization of ALD grown ZnO Nanotubes and their Integration into Sub-Micron MEMS Devices
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Abdel-Fattah, T.
Gu, D.
Baumgart, H.
Bajpai, R.
Zaghloul, M.
- Meet. Abstr.–Electrochem. Soc. 902, 2018 (2009), the 5th International Symposium on Atomic Layer Deposition Applications
- Conference Name: ECS
- Sponsoring Organization: ECS
- Location: Vienna, Austria
- Date: October, 2009
- Authors/Presenters:
Tapily, K.
Gu, D.
Baumgart, H.
Namkoong, G.
Elmustafa, A.
- Atomic Layer Deposition (ALD) of high-k Dielectric Films for Gate Stack Engineering and for Microfluidic Applications
- Conference Name:
- Location: Zurich, Switzerland
- Date: October 1, 2009
- Authors/Presenters:
Baumgart, H.
- RF and Structural Characterization of SRF Films
- Conference Name:
- Location: Berlin, Germany
- Date: September, 2009
- Authors/Presenters:
Valente-Feliciano, A.
Phillips, H.
Reece, C.
Zhaoe, X.
Gu, D.
Baumgart, H.
Lukaszew, R.
Xiao, B.
Seo, K.
- TEM Study of Niobium Surfaces Treated by Different Polishing Techniques
- Conference Name:
- Location: Berlin, Germany
- Date: September, 2009
- Authors/Presenters:
Wu, A.
Gu, D.
Baumgart, H.
- Synthesis of Nested Coaxial Nanotubes by ALD for Microfluidics and Sensor Applications
- Conference Name:
- Location: Gaithersburg, Maryland
- Date: August 21, 2009
- Authors/Presenters:
Baumgart, H.
- Zeta Potentials of ALD Metal Oxide Films for Microfluidic Applications
- Conference Name:
- Location: Monterey, California
- Date: July, 2009
- Authors/Presenters:
Gu, D.
Yalcin, S.
Baumgart, H.
Qian, S.
Baysal, O.
Beskok, A.
- Structural and Nanomechanical Characterization of ALD ZnO
- Conference Name:
- Location: Monterey, California
- Date: July, 2009
- Authors/Presenters:
Tapily, K.
Stegall, D.
Gu, D.
Baumgart, H.
Namkoong, G.
Elmustafa, A.
- Fabrication of Si Nanowire Nonvolatile Memory Cells and Nanotemplate based Electroosmotic Pumps by Atomic Layer Deposition
(ALD)
- Conference Name: Technical University Darmstadt, Department of Electrical Engineering, Institute of Semiconductor Technology and Nano-Electronics
- Sponsoring Organization: Technical University Darmstadt, Department of Electrical Engineering, Institute of Semiconductor Technology and Nano-Electronics
- Location: Darmstadt, Germany
- Date: July 8, 2009
- Authors/Presenters:
Baumgart, H.
- Applications of Atomic Layer Deposition (ALD) in Nanotechnology
- Conference Name:
- Location: Stuttgart, Germany
- Date: July 6, 2009
- Authors/Presenters:
Baumgart, H.
- Experimental Raman Study and Finite Element Modeling of Strain Distribution in Patterned Device Islands on Strained Silicon-on-Insulator
(sSOI) Substrates
- Conference Name:
- Location: University Park, Pennsylvania
- Date: June, 2009
- Authors/Presenters:
Gu, D.
Zhu, M.
Naumann, F.
Petzold, M.
Baumgart, H.
- Experimental Raman Study and Finite Element Modeling of Strain Distribution in
- Conference Name:
- Location: University Park, PA
- Date: June, 2009
- Authors/Presenters:
Gu, D.
Zhu, M.
Nauman, F.
Petzold, M.
Baumgart, H.
- Low Temperature ZnO Growth for Nanotube Fabrication by Atomic Layer Deposition
- Conference Name:
- Location: University Park, PA
- Date: June, 2009
- Authors/Presenters:
Gu, D.
Tapily, K.
Yao Yao
Shrestha, P.
Baumgart, H.
- Silicon Nanowire Non-Volatile Memory with High-k Gate Dielectric Stack
- Conference Name:
- Location: Cambridge, UK
- Date: June 29, 2009
- Authors/Presenters:
Zhu, X.
Gu, D.
Li, Q.
Loannou, D.
Baumgart, H.
Suehle, J.
Richter, C.
- Nanowire Non-Volatile Memory with HfO2 Trapping Layers
- Conference Name:
- Location: Monterey, California
- Date: May, 2009
- Authors/Presenters:
Zhua, X.
Gu, D.
Lia, Q.
Loannou, D. E.
Baumgart, H.
Suehle, J. S.
Richter, C. A.
- Thin Film, Nanotechnology and Sensor Development at Old Dominion University’s Applied Research Center at Jefferson National
Accelerator Facility
- Conference Name: British Aerospace Engineering (BAE) Systems Microelectronics Technology, Space Systems and Electronics
- Sponsoring Organization: British Aerospace Engineering (BAE) Systems Microelectronics Technology, Space Systems and Electronics
- Location: Manassas, Virginia
- Date: May 18, 2009
- Authors/Presenters:
Baumgart, H.
- Characterization of ALD grown ZnO
- Conference Name: Thomas Jefferson National Laboratory
- Sponsoring Organization: Thomas Jefferson National Laboratory
- Location: Newport News, VA
- Date: April, 2009
- Authors/Presenters:
Tapily, K.
Baumgart, H.
- Electrical Properties of MOS Capacitors with High-k Dielectric HfO2 Gate Insulator Using ALD
- Conference Name: Thomas Jefferson National Laboratory
- Sponsoring Organization: Thomas Jefferson National Laboratory
- Location: Newport News, VA
- Date: April, 2009
- Authors/Presenters:
Shrestha, P.
Ndoye, C.
Anderson, W.
Elliott, D.
Thomas, J.
Baumgart, H.
Gu, D.
- Effect of Wafer Bonding and Layer Splitting on Nanomechanical Properties of standard and strained SOI Films
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Tapily, K.
Baumgart, H.
Gu, D.
Elmustafa, A.
Krause, M.
Petzold, M.
- Strain Relaxation in Patterned Strained Silicon-on-Insulator (sSOI) by Raman Spectroscopy
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Gu, D.
Baumgart, H.
Zhu, M.
Celler, G.
- Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Gu, D.
Baumgart, H.
Bourdelle, K.
Celler, G.
Elmustafa, A.
- Comparison of Nanomechanical Behavior of the Amorphous and Crystalline Phases of ALD HfO2
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Tapily, K.
Jakes, J.
Stone, D.
Shrestha, P.
Gu, D.
Baumgart, H.
Elmustafa, A.
- Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Shrestha, P.
Tapily, K.
Gu, D.
Baumgart, H.
- Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template Method
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Abdel-Fattah, T.
Gu, D.
Baumgart, H.
Namkoong, G.
- Enhanced Photonic Band Gap and Defect Structure of Diamond Based Photonic Crystals using ALD Hafnium Oxide Coating
- Conference Name:
- Location: Honolulu, Hawaii
- Date: October, 2008
- Authors/Presenters:
Thitsa, M.
Baumgart, H.
Gu, D.
Albin, S.
- Review of Atomic Layer Deposition (ALD) for Superconducting RF Applications
- Conference Name:
- Location: Newport News, Virginia
- Date: July 22, 2008
- Authors/Presenters:
Baumgart, H.
- Application of Atomic Layer Deposition for Gate Stack Engineering on strained Silicon-on-Insulator (sSOI) and Germanium-on-Insulator
(GeOI) Technology Platform for future High Performance CMOS Devices
- Conference Name:
- Location: Charlottesville, VA
- Date: June 26, 2008
- Authors/Presenters:
Baumgart, H.
- Strain Engineered Silicon-on-Insulator (sSOI) Technology by Wafer Bonding and Layer Transfer
- Conference Name:
- Location: University of Tokyo, Hongo, Tokyo, Japan
- Date: November, 2007
- Authors/Presenters:
Baumgart, H.
- Strain Engineered Silicon-on-Insulator (sSOI) Technology by Wafer Bonding and Layer Transfer
- Conference Name:
- Location: University of Tokyo, Hongo, Tokyo, Japan
- Date: November, 2007
- Authors/Presenters:
Baumgart, H.
- Experimental Study of Atomic Layer Deposition (ALD) HfO2 Deposited on Strained Silicon-on-Insulator (sSOI) & extra strained
(xsSOI) and SOI
- Conference Name:
- Location: Washington D.C.
- Date: October, 2007
- Authors/Presenters:
Gu, D.
Tapily, K.
Shrestha, P.
Celler, G.
Baumgart, H.
- Tuning the absolute Bandgap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers
- Conference Name:
- Location: Washington D.C.
- Date: October, 2007
- Authors/Presenters:
Thitsa, M.
Gu, D.
Baumgart, H.
Albin, S.
- Nanomechanical Properties of High-k Dielectrics Grown by Atomic Layer Deposition
- Conference Name:
- Location: Washington D.C.
- Date: October, 2007
- Authors/Presenters:
Tapily, K.
Jakes, J.
Stone, D.
Shrestha, P.
Gu, D.
Baumgart, H.
Elmustafa, A.
- Nanoindentation Study of Silicon-on-Insulator (SOI) and Strained (sSOI) Multilayer Composite Films
- Conference Name:
- Location: Seattle, Washington
- Date: October, 2007
- Authors/Presenters:
Jakes, J.
Stone, D.
Tapily, K.
Baumgart, H.
Celler, G.
Elmustafa, A.
- Nanomechanical Properties of Strained Silicon-on-Insulator (sSOI) Films Epitaxially grown on Si1-xGex and Layer Transferred
by Wafer Bonding
- Conference Name:
- Location: San Francisco, California
- Date: April, 2007
- Authors/Presenters:
Miller, N.
Tapily, K.
Baumgart, H.
Elmustafa, A.
Celler, G.
Brunier, F.
- Thin Film Materials Challenges in Nanoelectronic Technology
- Conference Name:
- Location: Dresden, Germany
- Date: July 12, 2006
- Authors/Presenters:
Baumgart, H.
- Thin Film Materials Challenges in Nanoelectronic Technology
- Conference Name:
- Location: Dresden, Germany
- Date: July 12, 2006
- Authors/Presenters:
Baumgart, H.
- Technology Development TechXpress and TDRAM for Leading Edge CMOS Characterization
- Conference Name:
- Location: Sarawak, Malaysia
- Date: March, 2005
- Authors/Presenters:
Baumgart, H.
- Introduction to TDROM, TDAnalog and TestChip Analysis for Random Failure Mode Detection and Yield Improvement
- Conference Name:
- Location: Kedah, Malaysia
- Date: February, 2005
- Authors/Presenters:
Baumgart, H.
- Challenges to BEOL Contact Integration and Yield Optimization for High Performance CMOS Logic Platform Development at the
90nm and 65nm Technology Nodes
- Conference Name:
- Location: Norfolk, Virginia
- Date: January 14, 2005
- Authors/Presenters:
Baumgart, H.
- Process Control and Yield Enhancement for BEOL and Contact Module at 130nm and 90nm Technology Node
- Conference Name:
- Location: Portland, Maine
- Date: April 9, 2004
- Authors/Presenters:
Baumgart, H.
- Voltage Contrast Inspection in BEOL Yield Enhancement Module Integration for CMOS Logic Platform Development
- Conference Name:
- Location: San Jose, California
- Date: March 22, 2004
- Authors/Presenters:
Baumgart, H.
- Contact Module Process Recovery Case Study for 130nm CMOS Logic with Copper Dual Damascene Backend
- Conference Name:
- Location: Davis, California
- Date: March 12, 2004
- Authors/Presenters:
Baumgart, H.
- Voltage Contrast Inspection in BEOL Yield Enhancement Module Integration for CMOS Logic Platform Development
- Conference Name:
- Location: Austin, Texas
- Date: January, 2004
- Authors/Presenters:
Baumgart, H.
- Reduction of Yield Losses due to Cu Puddle Shorts by Conditioning the Surface of Low-K
- Conference Name:
- Location: Dresden, Germany
- Date: October 7, 2003
- Authors/Presenters:
Baumgart, H.
- Containment of Systematic Yield Detractors of the BEOL Module of Motorola’s Flagship SOI Technology HiP7 HP SOI
- Conference Name:
- Location: Grenoble - Crolles, France
- Date: May, 2003
- Authors/Presenters:
Baumgart, H.
- A Novel Approach to Contact Integration at 90 nm and Beyond
- Conference Name:
- Location: Paris, France
- Date: April, 2003
- Authors/Presenters:
Singhal, A.
Sparks, T.
Strozewski, K.
Huang, F.
Parihar, S.
Schmidt, J.
Boeck, B.
Fretwell, J.
Yeap, G.
Sheth, V.
Veeraghavan, S.
Melnick, B.
Baumgart, H.
- Device Physics and Technology of LDMOS Devices in SOI Technology
- Conference Name:
- Location: Halle, Germany
- Date: February, 1997
- Authors/Presenters:
Baumgart, H.
- High Voltage LDMOS Process Development in SOI Technology for Lighting Electronics Applications
- Conference Name:
- Location: Munich, Germany
- Date: February, 1997
- Authors/Presenters:
Baumgart, H.
- Analysis of Process-Induced Stresses in Lateral SOI Trench Isolation Structures for High Voltage Devices in Bonded SOI
- Conference Name:
- Location: Reno, Nevada
- Date: May, 1995
- Authors/Presenters:
Baumgart, H.
Letavic, T.
De Wolf, I.
Tsou, L.
Maes, H.
Egloff, R.
- Strain Sources in Bond and Etch-back Silicon-on-Insulator
- Conference Name:
- Location: Reno, Nevada
- Date: May, 1995
- Authors/Presenters:
Egloff, R.
Letavic, T.
Merchant, S.
Greenberg, B.
Baumgart, H.
- A Novel High Voltage LDMOS Process in SOI Technology
- Conference Name:
- Location: East Fishkill, New York
- Date: October 14, 1994
- Authors/Presenters:
Baumgart, H.
- Advances in Silicon-on-Insulator ( SOI ) Technology
- Conference Name:
- Location: Albany, New York
- Date: March 25, 1994
- Authors/Presenters:
Baumgart, H.
- Measurement of Minority Carrier Diffusion Length and Lifetime in SOI Devices by Flying Spot Laser Scanner as a Function of
Residual Misfit
- Conference Name:
- Location: Palm Springs, California
- Date: October, 1993
- Authors/Presenters:
Baumgart, H.
Egloff, R.
Arnold, E.
Letavic, T.
Merchant, S.
Mukherjee, S.
Bhimnatwala, H.
- SOI High Voltage LDMOS and LIGBT Transistors with a Buried Diode and Surface P-Layer
- Conference Name:
- Location: Ponte Vedra Beach, Florida
- Date: October, 1992
- Authors/Presenters:
Pein, H.
Arnold, E.
Baumgart, H.
Egloff, R.
Letavic, T.
Merchant, S.
Mukherjee, S.
- High Breakdown Voltage Devices in Ultra-Thin SOI
- Conference Name:
- Location: Vail Valley, Colorado
- Date: October, 1991
- Authors/Presenters:
Merchant, S.
Arnold, E.
Baumgart, H.
Mukherjee, S.
Pein, H.
Pinker, R.
- Thermomechanical Device Processing Issues in Bonded SOI Wafers
- Conference Name:
- Location: Phoenix, Arizona
- Date: May, 1991
- Authors/Presenters:
Letavic, T.
Baumgart, H.
- Thermomechanical Device Processing Issues in Bonded SOI Wafers
- Conference Name:
- Location: Phoenix, Arizona
- Date: May, 1991
- Authors/Presenters:
Letavic, T.
Baumgart, H.
- Materials Issues in SIMOX Technology
- Conference Name:
- Location: Durham, North Carolina
- Date: October 31, 1990
- Authors/Presenters:
Baumgart, H.
- Origin of Residual Defects in Bonding and Etch-Back Silicon-on-Insulator Technology
- Conference Name:
- Location: Montreal, Canada
- Date: May, 1990
- Authors/Presenters:
Baumgart, H.
Pinker, R.
Kellawon, P.
Steigmeier, E.
de Kock, A.
- Characterization of Silicon-on-Insulator ( SOI ) Materials by Light Scattering Topography
- Conference Name:
- Location: Lisbon, Portugal
- Date: April, 1990
- Authors/Presenters:
Steigmeier, E.
Auderset, H.
Baumgart, H.
- Advances in Silicon-on-Insulator Thin Film Fabrication by High Dose Oxygen Implantation (SIMOX )
- Conference Name:
- Location: Briarcliff Manor, New York
- Date: 1989
- Authors/Presenters:
Baumgart, H.
- Impact of Interface Preparation of Defect Generation During Wafer Bonding
- Conference Name:
- Location: Stateline, Nevada
- Date: October, 1989
- Authors/Presenters:
Baumgart, H.
Pinker, R.
Steigmeier, E.
Auderset, H.
de Kock, A.
- Reassessment of Defect Models in Graphite Strip Heater Zone-Melt Recrystallized Material by Non-Destructive Thin Film Diagnostics
- Conference Name:
- Location: Stateline, Nevada
- Date: October, 1989
- Authors/Presenters:
Theunissen, M.
Goemans, A.
de Kock, A.
Geijselaers, M.
Baumgart, H.
- X-ray Topographic Analysis for Monitoring of Growth Defects in Graphite Strip Heater Zone-Melt Recrystallized Silicon Films
on Insulating Substrates
- Conference Name:
- Location: Sunnyvale, California
- Date: October, 1989
- Authors/Presenters:
Baumgart, H.
- X-ray Topographic Analysis of State-of-the-Art Zone-Melt Recrystallized Material
- Conference Name:
- Location: Taunton, Massachusetts
- Date: June, 1989
- Authors/Presenters:
Baumgart, H.
- Monitoring of Growth Defects in Graphite Strip Heater Zone-Melt Recrystallized Silicon Films
- Conference Name:
- Location: Columbia, Maryland
- Date: May, 1989
- Authors/Presenters:
Baumgart, H.
- Optical Recording Aspects of rf Magnetron Sputtered Iron Garnet Films
- Conference Name:
- Location: San Diego, California
- Date: April, 1989
- Authors/Presenters:
Krumme, J.
Doorman, V.
Hansen, P.
Baumgart, H.
Petruzzello, J.
Viegers, M.
- Composition and Microstructure of Low Dislocation Content SIMOX
- Conference Name:
- Location: St. Simmons Island, Georgia
- Date: October, 1988
- Authors/Presenters:
Baumgart, H.
van Ommen, A.
- Defect Analysis of SOI Structures Made by CO2 Laser Zone-Melt Recrystallization
- Conference Name:
- Location: St. Simons Island
- Date: October, 1988
- Authors/Presenters:
Baumgart, H.
Theunissen, M.
Geijselaers, M.
- Current Status of the Technology of Silicon Separated by Implantation of Oxygen (SIMOX )
- Conference Name:
- Location: Strasbourg, France
- Date: June, 1988
- Authors/Presenters:
Baumgart, H.
- Current Status of the Technology of Silicon Separated by Implantation of Oxygen (SIMOX )
- Conference Name:
- Location: Strasbourg, France
- Date: June, 1988
- Authors/Presenters:
Baumgart, H.
- SIMOX Technology and Silicon Direct Wafer Bonding for SOI Applications
- Conference Name:
- Location: Stuttgart, Germany
- Date: May, 1988
- Authors/Presenters:
Baumgart, H.
- Materials Advances in Silicon-on-Insulator ( SOI ) Technology by Laser-Induced Zone-Melting Recrystallization
- Conference Name:
- Location: Munich, Germany
- Date: April, 1988
- Authors/Presenters:
Baumgart, H.
- Ion Beam Synthesis of Buried SiO2 Layers for Silicon-on-Insulator ( SOI ) Film Fabrication
- Conference Name:
- Location: Burghausen, Germany
- Date: April, 1988
- Authors/Presenters:
Baumgart, H.
- Local Defect-Free Monocrystalline SOI Made by CO2 Laser Melting at Low Substrate
- Conference Name:
- Location: Meylan, France
- Date: March, 1988
- Authors/Presenters:
Theunissen, M.
Haisma, J.
Baumgart, H.
Widdershoven, F.
Mulder, J.
- Influences of Very High Temperature Annealing of Physical and Dielectric Properties of Implanted Buried Oxide Layers
- Conference Name:
- Location: Meylan, France
- Date: March, 1988
- Authors/Presenters:
Baumgart, H.
Wolters, D.
van Duynhoven, A.
Petruzzello, J.
- Physical Properties of Silicon-on-Insulator ( SOI ) Films Grown by Unseeded Laser Induced Zone-Melting
- Conference Name:
- Location: Stuttgart, Germany
- Date: February, 1988
- Authors/Presenters:
Baumgart, H.
- Interfacial and Dielectric Properties of SIMOX and Zone-Melting Recrystallized SOI Buried Oxides
- Conference Name:
- Location: Durango, Colorado
- Date: October, 1987
- Authors/Presenters:
Arnold, E.
Baumgart, H.
- Current Zone-Melt Recrystallization Research at Philips Labs in Briarcliff Manor
- Conference Name:
- Location: Eindhoven, The Netherlands
- Date: September, 1987
- Authors/Presenters:
Baumgart, H.
- Raman Scattering Characterization of Semi-Insulating Polycrystalline Silicon
- Conference Name:
- Location: New York, City
- Date: March, 1987
- Authors/Presenters:
Olego, D.
Baumgart, H.
- Structural and Photoluminescent Properties of Subboundaries in Zone-Melt Recrystallized Silicon-on-Insulator ( SOI ) Films
- Conference Name:
- Location: New York City
- Date: March, 1987
- Authors/Presenters:
Baumgart, H.
Weber, J.
Pandya, R.
Marinez, A.
- Radiative Recombination in Laser Zone-Melt Recrystallized SOI Films
- Conference Name:
- Location: Captiva Island, Florida
- Date: October, 1986
- Authors/Presenters:
Baumgart, H.
Weber, J.
Pandya, R.
- Physical Properties of Silicon-on-Insulator Films Grown by Unseeded Laser-Induced Zone-Melting
- Conference Name:
- Location: Boston, Massachusetts
- Date: May, 1986
- Authors/Presenters:
Baumgart, H.
- Physical Properties of Silicon-on-Insulator Films Grown by Unseeded Laser-Induced Zone-Melting
- Conference Name:
- Location: Boston, Massachusetts
- Date: May, 1986
- Authors/Presenters:
Baumgart, H.
- Faceting at the Silicon ( 100 ) Crystal Melt Interface
- Conference Name:
- Location: Las Vegas, Nevada
- Date: April, 1986
- Authors/Presenters:
Landmann, U.
Luedtke, W.
Barnett, R.
Cleveland, C.
Arnold, E.
Ramesh, S.
Baumgart, H.
Martinez, A.
- Defect Formation during Zone-Melting Recrystallization of Silicon-on-Insulator Films
- Conference Name:
- Location: Briarcliff Manor, New York
- Date: February, 1986
- Authors/Presenters:
Baumgart, H.
- Silicon-on-Insulator Technology by Crystallization on Quartz Substrates
- Conference Name:
- Location: Los Angeles, California
- Date: January, 1986
- Authors/Presenters:
Baumgart, H.
- Silicon-on-Insulator Technology by Crystallization on Quartz Substrates
- Conference Name:
- Location: Los Angeles, California
- Date: January, 1986
- Authors/Presenters:
Baumgart, H.
- The Microstructure of Laser Processed Silicon-on-Insulator Films
- Conference Name:
- Location: Park City, Utah
- Date: October, 1985
- Authors/Presenters:
Baumgart, H.
Phillipp, F.
Martinez, A.
Arnold, E.
- The Mechanism of Line Defect Nucleation in Zone-Melting Grown Silicon Films on SiO2
- Conference Name:
- Location: Plymouth, New Hampshire
- Date: July, 1985
- Authors/Presenters:
Baumgart, H.
Phillipp, F.
Martinez, A.
Arnold, E.
- Silicon-on-Insulator Technology for Thin Film Transistors
- Conference Name:
- Location: Hamburg, Germany
- Date: April, 1985
- Authors/Presenters:
Baumgart, H.
- Silicon-on-Insulator Technology for Thin Film Transistors
- Conference Name:
- Location: Hamburg, Germany
- Date: April, 1985
- Authors/Presenters:
Baumgart, H.
- Laser Recrystallized Silicon Films on Insulators for Large Area Devices
- Conference Name:
- Location: Redhill, England
- Date: March, 1985
- Authors/Presenters:
Baumgart, H.
- Laser Assisted Zone-Melt Recrystallization of Si Films on SiO2
- Conference Name:
- Location: Towcester, England
- Date: March, 1985
- Authors/Presenters:
Baumgart, H.
- Silicon Thin Film Growth on Amorphous Substrates
- Conference Name:
- Location: Meudon ( Paris ), France
- Date: September, 1984
- Authors/Presenters:
Baumgart, H.
- Subgrain Boundaries in Zone-Melting Processed Silicon
- Conference Name:
- Location: Stuttgart, Germany
- Date: September, 1984
- Authors/Presenters:
Baumgart, H.
- Silicon-on-Insulator Technology by Laser Induced Zone-Melting Recrystallization
- Conference Name:
- Location: Eindhoven, The Netherlands
- Date: September, 1984
- Authors/Presenters:
Baumgart, H.
- Silicon-on-Insulator ( SOI ) Technology for Thin Film Transistors
- Conference Name:
- Location: Sunnyvale, California
- Date: February, 1984
- Authors/Presenters:
Baumgart, H.
- Full Isolation by Porous Oxidized Silicon
- Conference Name:
- Location: San Francisco, California
- Date: February, 1984
- Authors/Presenters:
Baumgart, H.
- Full Isolation by Porous Oxidized Silicon
- Conference Name:
- Location: San Francisco, California
- Date: January, 1984
- Authors/Presenters:
Baumgart, H.
- The Application of Laser Processing for Silicon Thin Film Growth on Insulators
- Conference Name:
- Location: Baden, Switzerland
- Date: June, 1982
- Authors/Presenters:
Baumgart, H.
- Application of CO2 Laser Irradiation to the Fabrication of Silicon-on-Insulator Structures
- Conference Name:
- Location: Fort Collins, Colorado
- Date: June, 1982
- Authors/Presenters:
Baumgart, H.
Doherty, C.
Leamy, H.
- Laser Annealing Studies of Semiconductors
- Conference Name:
- Location: Santa Clara, California
- Date: May, 1982
- Authors/Presenters:
Baumgart, H.
- New Dielectric Isolation Techniques using Porous Silicon
- Conference Name:
- Location: Raleigh, North Carolina
- Date: May, 1982
- Authors/Presenters:
Baumgart, H.
- Laser Processing of Polycrystalline Thin Silicon Films
- Conference Name:
- Location: Briarcliff Manor, New York
- Date: May, 1982
- Authors/Presenters:
Baumgart, H.
- Zone-Melt Recrystallization Techniques for Silicon-on-Insulator Structures
- Conference Name:
- Location: Palo Alto, California
- Date: February, 1982
- Authors/Presenters:
Baumgart, H.
- Picosecond Laser Annealing of Silicon
- Conference Name:
- Location: Minneapolis, Minnesota
- Date: May, 1981
- Authors/Presenters:
Rozgonyi, G.
Baumgart, H.
- Correlation between EBIC Contrast and Residual Defects in Slip-Free CW Laser Annealed Silicon
- Conference Name:
- Location: Minneapolis, Minnesota
- Date: May, 1981
- Authors/Presenters:
Baumgart, H.
Phillipp, F.
- Picosecond Laser Pulse Annealing Phenomena
- Conference Name:
- Location: Münster, Germany
- Date: March, 1981
- Authors/Presenters:
Baumgart, H.
- SEM and EBIC Investigations of Residual Defects in Laser Annealed and Solid Phase Epitaxially Reconstructed Silicon Surfaces
- Conference Name:
- Location: Grenoble, France
- Date: December, 1980
- Authors/Presenters:
Baumgart, H.
- HVEM Investigations of CW Laser Annealed Silicon
- Conference Name:
- Location: Hollywood, Florida
- Date: October, 1980
- Authors/Presenters:
Phillipp, F.
Baumgart, H.
Rozgonyi, G.
Gosele, U.
Packeiser, G.
- X-ray Topographic Analysis of the Perfection of Laser Annealed Silicon Layers
- Conference Name:
- Location: Berlin, W. Germany
- Date: October, 1980
- Authors/Presenters:
Baumgart, H.
- Laser Induced Radiation Damage during CW Laser Annealing of Disordered Silicon Layers
- Conference Name:
- Location: Tokyo, Japan
- Date: September, 1980
- Authors/Presenters:
Baumgart, H.
- Application of X-ray Topography for Semiconductor Materials Analysis
- Conference Name:
- Location: Beijing, China
- Date: August, 1980
- Authors/Presenters:
Baumgart, H.
- Current Laser Annealing Research at the Max Planck Institute of Solid State Research in Stuttgart
- Conference Name:
- Location: Beijing, China
- Date: August, 1980
- Authors/Presenters:
Baumgart, H.
- Dislocation Generation during CW Laser Annealing of Silicon
- Conference Name:
- Location: Sicily, Italy
- Date: April, 1980
- Authors/Presenters:
Baumgart, H.
- Laser Annealing Investigation on the Time Dependence of the Nucleation of Slip Dislocations in Silicon
- Conference Name:
- Location: Freudenstadt, Germany
- Date: March, 1980
- Authors/Presenters:
Baumgart, H.
Rozgonyi, G.
- 1975: Fulbright Scholarship, Purdue University, W. Lafayette, Indiana
- 1978: Graduate Research Scholarship, Max-Planck Society, Stuttgart, Germany
- 2001: Infineon Technology: Special Recognition Award for Leadership of FMEA Team
- 2002: Motorola Award:, Motorola
- 1984: President’s Making a Difference Award, Philips Research
- 1985: Special Merit Award, Philips Research
- 1989: Special Merit Award, Philips Research
-
Contracts, Grants and Sponsored Research
-
Intellectual Property
- A Silicon Quantum Dot Luminescent Display
- Patent/Copyright: Patent
- A Silicon Quantum Dot Luminescent Display
- Patent/Copyright: Patent
- Method to Remove Existing Extended Defects caused by High Dose Oxygen Implantation Damage in thin SIMOX Films
- Patent/Copyright: Patent
- Method to Remove Existing Extended Defects caused by High Dose Oxygen Implantation Damage in thin SIMOX Films
- Patent/Copyright: Patent
- Method for Contacting Wide Band Gap Quantum Wire Sized Porous Si by III-V Semiconductors or II-VI Semiconductors for LED Device
Structures
- Patent/Copyright: Patent
- Method for Contacting Wide Band Gap Quantum Wire Sized Porous Si by III-V Semiconductors or II-VI Semiconductors for LED Device
Structures
- Patent/Copyright: Patent
- Method for Controlled RF Plasma Beam Induced Zone-Melting Crystal Growth of thin Si Layers on Insulators and Rapid Thermal
Annealing
- Patent/Copyright: Patent
- Method for Controlled RF Plasma Beam Induced Zone-Melting Crystal Growth of thin Si Layers on Insulators and Rapid Thermal
Annealing
- Patent/Copyright: Patent
- Method for Enhanced Low Temperature Oxidation of Polycrystalline or Single Crystal Silicon Films
- Patent/Copyright: Patent
- Method for Enhanced Low Temperature Oxidation of Polycrystalline or Single Crystal Silicon Films
- Patent/Copyright: Patent
- Method for Fabrication of L.E.D. Light Emitting Diode in the Visible Range in Quantum Wire Sized Porous Si
- Patent/Copyright: Patent
- Method for Fabrication of L.E.D. Light Emitting Diode in the Visible Range in Quantum Wire Sized Porous Si
- Patent/Copyright: Patent
- Method for Forming Electrostatic Field Induced Preferential Texture in Polycrystalline Silicon on Insulating Substrates
- Patent/Copyright: Patent
- Method for Forming Electrostatic Field Induced Preferential Texture in Polycrystalline Silicon on Insulating Substrates
- Patent/Copyright: Patent
- Method for Growth of Crystalline Garnet Films on arbitrary Amorphous Substrates for Magneto-Optic Applications
- Patent/Copyright: Patent
- Method for Growth of Crystalline Garnet Films on arbitrary Amorphous Substrates for Magneto-Optic Applications
- Patent/Copyright: Patent
- Method of Creating a Novel Silicon-on-Insulator Structure by Substituting electrically inactive Coherent Twins for electrically
active and Detrimental Low Angle Grain Boundaries
- Patent/Copyright: Patent
- Method of Creating a Novel Silicon-on-Insulator Structure by Substituting electrically inactive Coherent Twins for electrically
active and Detrimental Low Angle Grain Boundaries
- Patent/Copyright: Patent
- Method to Prevent the Formation of Low Angle Grain Boundaries and other Lattice Defects during Energy Beam Induced Zone-Melting
Recrystallization of Si Films on Insulator
- Patent/Copyright: Patent
- Method to Prevent the Formation of Low Angle Grain Boundaries and other Lattice Defects during Energy Beam Induced Zone-Melting
Recrystallization of Si Films on Insulator
- Patent/Copyright: Patent
- MULTIPLE WALLED NESTED COAXIAL NANOSTRUCTURES
- Patent/Copyright: Patent
- Method to prevent Electrical Charge-up in Fluorescent Lighting Phosphors and Method to improve Heat Conduction by Providing
a Conformal ALD Coating with an Electrically Conducting & Optically Transparent thin Film of ZnO
- Patent/Copyright: Patent
- HIGH-EFFICIENCY HYBRID ORGANIC-INORGANIC SOLAR CELLS
- Patent/Copyright: Patent
- Method to prevent electrical charge-up in Fluorescent Lighting Phosphors and Method to improve heat conduction by providing
a conformal ALD coating with an electrically conducting & optically transparent thin film of ZnO
- Patent/Copyright: Patent
- Method to replace Inefficient Luminescent loosely packed Phosphor powders in Fluorescent Lamps with a solid Luminescent Phosphor
Coating grown by Atomic Layer Deposition to increase the Luminous Efficacy
- Patent/Copyright: Patent
- Method for High Efficiencies Organic-Inorganic Solar Cells
- Patent/Copyright: Patent
- Method to Render Fabrics or any solid Surface Hydrophobic by Coatings with Nanostructured ALD Films for Use as Self Cleaning
Materials
- Patent/Copyright: Patent
- CARE SYSTEM AND BACTERICIDAL METHODS AND DEVICES
- Patent/Copyright: Patent
- MULTIPLE WALLED NESTED COAXIAL NANOSTRUCTURES
- Patent/Copyright: Patent
- WOUND CARE SYSTEM AND BACTERICIDAL METHODS AND DEVICES
- Patent/Copyright: Patent
- Method to Fabricate 2-D or 3-D Photonic Crystals by Using Atomic Layer Deposition (ALD) Film Coatings inside Walls of Pores
of nanoporous templates
- Patent/Copyright: Patent
- Method to Render Fabrics or any solid Surface Hydrophobic by Coatings with Nanostructured ALD Films for Use as Self Cleaning
Materials
- Patent/Copyright: Patent
- Method for Fabrication of a high Surface Area Oxygen Sensor utilizing ZrO2 ALD Coatings of Nano-channels in Nano-porous Templates
- Patent/Copyright: Patent
- Method for Fabrication of a high Surface Area Oxygen Sensor utilizing ZrO2 ALD Coatings of Nano-channels in Nano-porous Templates
- Patent/Copyright: Patent
- Method to Fabricate Bactericidal Wound Care Systems by Utilizing Atomic Layer Deposition (ALD) Coatings of TiO2 of all Individual
Fibers in Wound Dressing Fill Material
- Patent/Copyright: Patent
- Method to Fabricate Bactericidal Wound Care Systems by Utilizing Atomic Layer Deposition (ALD) Coatings of TiO2 of all Individual
Fibers in Wound Dressing Fill Material
- Patent/Copyright: Patent
- Method to Fabricate a three Electrode Active Zeta-Potential (ζ) Controlled Electroosmotic Pump in Nano-Porous Membranes using
Atomic Layer Deposition (ALD)
- Patent/Copyright: Patent
- Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled Electroosmotic Pump in Nano-Porous Membranes
using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
- Patent/Copyright: Patent
- Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled” Electroosmotic Pump in Nano-Porous Membranes
using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
- Patent/Copyright: Patent
- Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled” Electroosmotic Pump in Nano-Porous Membranes
using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
- Patent/Copyright: Patent
- Method for Fabricating Enhanced Surface Broad-Spectrum Sensors and Detectors using multiple Wall Tube-in-Tube Nanostructures
Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
- Patent/Copyright: Patent
- Method for Fabricating Enhanced Surface Broad-Spectrum Sensors and Detectors using multiple Wall Tube-in-Tube Nanostructures
Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
- Patent/Copyright: Patent
- Method for Forming multiple Walled Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication
Technique
- Patent/Copyright: Patent
- Method for Forming multiple Walled Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication
Technique
- Patent/Copyright: Patent
- Method for Solid State Shape Transformation of Nanostructures by release from Alumina Templates for the Manufacturing of perfectly
Circular Shaped Multiple Walled Nanotubes from Arbitrary Shaped Nanostructures
- Patent/Copyright: Patent
- Method for Solid State Shape Transformation of Nanostructures by release from Alumina Templates for the Manufacturing of perfectly
Circular Shaped Multiple Walled Nanotubes from Arbitrary Shaped Nanostructures
- Patent/Copyright: Patent
- Multi-layered Tube-in-Tube Solar Cells
- Patent/Copyright: Patent
- Multi-layered Tube-in-Tube Solar Cells
- Patent/Copyright: Patent
- Method for Nondestructive Measurement of Minority Carrier Diffusion Length and Minority Carrier Lifetime in Semiconductor
Devices
- Patent/Copyright: Patent
- Method for Nondestructive Measurement of Dopant Concentrations in the Drift Region of Certain Semiconductor Devices
- Patent/Copyright: Patent
- Patent Nationality: United States
- Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
- Patent/Copyright: Patent
- Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
- Patent/Copyright: Patent
- Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
- Patent/Copyright: Patent
- Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
- Patent/Copyright: Patent
- Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
- Patent/Copyright: Patent
- Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
- Patent/Copyright: Patent
- Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
- Patent/Copyright: Patent
- Process of Making Strain-Compensated Bonded Silicon-on-Insulator Material Free of Dislocations
- Patent/Copyright: Patent
- Patent Nationality: United States
- Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
- Patent/Copyright: Patent
- Patent Nationality: Patent Cooperation Treaty
- Cooperation Treaty: Europe, Japan
- Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
- Patent/Copyright: Patent
- Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
- Patent/Copyright: Patent
- Method of Preventing Encapsulation Layer Failure and Film Delamination during Micro-Zone Melting of Si
- Patent/Copyright: Patent
- Patent Nationality: United States
- Method for Producing single Crystal Layers on Insulators
- Patent/Copyright: Patent
- Patent Nationality: United States
- Method for Producing single Crystal Layers on Insulators
- Patent/Copyright: Patent
- Methods for Producing single Crystals in Insulators
- Patent/Copyright: Patent
- Patent Nationality: Patent Cooperation Treaty
- Cooperation Treaty: Europe, Japan
- Methods for Producing single Crystals in Insulators
- Patent/Copyright: Patent
- Methods for Producing single Crystals in Insulators
- Patent/Copyright: Patent