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Helmut Baumgart

Helmut Baumgart


PROFESSOR
Electrical & Computer Engineering

Contact Information


APPLIED RESEARCH CTR
NEWPORT NEWS, VA 23606

Email: hbaumgar@odu.edu

Phone: 757-269-7710


Biography


Education/Credentials


Web Link(s)



  • Articles

    Linseis, V., Zeinab Mohamed, H., Reith, H., Garcia, J., Nielsch, K., Baumgart, H., Redel, E., and Woias, P. (2018). Complete thermoelectric characterization of PEDOT:PSS thin films with a novel ZT test chip platform. Physical Status Solidi. A, Applications and Materials Science, 215 (7),
    Shrestha, P. R., Nminibapiel, D. M., Campbell, J. P., Ryan, J. T., Veksler, D., Baumgart, H., and Cheung, K. P. (2018). Analysis and Control of RRAM Overshoot Current. IEEE Transactions on Electron Devices, 65 (1), pp. 108-114.
    Chen, X., Wang, Z., Hassan, Z. M., Lin, P., Zhang, K., Baumgart, H., and Redel, E. (2017). Seebeck Coefficient Measurements of Polycrystalline and Highly Ordered Metal-Organic Framework Thin Films. ECS Journal of Solid State Science and Technology, 6 (4), pp. P150--P153.
    Bersuker, G., Veksler, D., Nminibapiel, D. M., Shrestha, P. R., Campbell, J. P., Ryan, J. T., and Baumgart, H. (2017). Toward reliable RRAM performance: Macro- and micro-analysis of operation processes. Journal of Computational Electronics, 16, pp. 1085-1094.
    Ai, Y., Yalcin, S., Gu, D., Baysal, O., Baumgart, H., Qian, S., and Beskok, A. (2010). A Low Voltage Nano-Porous Electroosmotic Pump. J. Colloid and Interface Science, 350, pp. 465.
    Tapily, K., Gu, D., Baumgart, H., Namkoong, G., Stegall, D., and Elmustafa, A. Mechanical Characterization of ALD Zinc Oxide by Nanoindentation. Journal of Vacuum Technology B
    Gu, D., Baumgart, H., Tapily, K., Shrestha, P., Namkoong, G., Ao, X., and Muller, F. Method for Precise Control of Three-Dimensional Structural Parameters of Highly Ordered Arrays of Nested Semiconductor/Metal Nanotubes. Advanced Materials
    Tapily, K., Jakes, J., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Nanomechanical Study of Amorphous and Polycrystalline ALD HfO2 Thin Films. Intl. Journal of Surface Science and Engineering
    Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (2010). Synthesis of Nested Coaxial Multiple Walled Nanotubes by Atomic Layer Deposition. ACS Nano, 4, pp. 753-758.
    Gu, D., Baumgart, H., Namkoong, G., and Abdel-Fattah, T. (2009). Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication. Electrochemical and Solid-State Letters, 12 (4), pp. K25-K28.
    Shrestha, P., Tapily, K., Gu, D., and Baumgart, H. (2009). Characterization of ALD HfO2 on strained Silicon Grown on Si0.8Ge0.2-Silicon Substrates. J. Electrochem. Soc.
    Jakes, J. E., Frihart, C. R., Beecher, J. F., Moon, R. J., Resto, P. J., Melgarejo, Z. H., Sua’rez, O. M., Baumgart, H., Elmustafa, A., and Stone, D. S. (2009). Nanoindentation near the edge. Journal of Materials Research, 24 (3), pp. 1016-1031.
    Tapily, K., Shrestha, Gu, P. D., Baumgart, H., and Elmustafa, A. (2009). Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting. Japanese Journal of Applied Physics, 48, pp. 101202-1-101202-4.
    Zhu, X., Gu, D., Li, Q., Ioannou, D., Baumgart, H., Suehle, J., and Richter, C. (2009). Silicon Nanowire Non-Volatile Memory with High-k Gate Dielectric Stack. Microelectron. Eng., 86, pp. 1957.
    Gu, D., Baumgart, H., Zhu, M., and Celler, G. (2009). Size and Thickness Effect on the local Strain Relaxation in Patterned Silicon-on-Insulator. Electrochem. and Solid-State Lett., 12 (4),
    Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (2009). Synthesis of Tube-in-Tube Nanostructures of Metal Oxides by Template Replication. Nano Letters
    Gu, D., Tapily, K., Shrestha, P., Zhu, M., Celler, G., and Baumgart, H. (2008). Experimental Study of ALD HfO2 Deposited on Strained Silicon-on-Insulator and Standard SOI. J. Electrochem. Soc., 155 (6), pp. G129 – G133.
    Tapily, K., Jakes, J. E., Stone, D. S., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. A. (2008). Nanoindentation Investigation of HfO2 and Al2O3 Films Grown by Atomic Layer Deposition. J. Electrochem. Soc., 155 (7), pp. H545 – H551.
    Abdel-Fattah, T. M., Gu, D., Baumgart, H., and Namkoong, G. (2008). Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template Method. ECS Transactions, 16 (4), pp. 159-164.
    Gu, D., Tapily, K., Shrestha, P., Celler, G., and Baumgart, H. (2007). Experimental Study of Atomic Layer Deposition (ALD) HfO2 Deposited on Strained Silicon-on-Insulator (sSOI) & extra strained (xsSOI) and SOI. ECS Transactions, 11 (4), pp. 421-429.
    Tapily, K., Jakes, J., Stone, D. S., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (2007). Nanomechanical Properties of High-k Dielectrics Grown by Atomic Layer Deposition. ECS Transactions, 11 (7), pp. 123-130.
    Miller, N., Tapily, K., Baumgart, H., Elmustafa, A. A., Celler, G., and Brunier, F. (2007). Nanomechanical Properties of Strained Silicon-on-Insulator (sSOI) Films Epitaxially grown on Si1-xGex and Layer Transferred by Wafer Bonding. Mater. Res. Soc. Symp. Proc., 1021E (5),
    Thitsa, M., Gu, D., Baumgart, H., and Albin, S. (2007). Tuning the absolute Bandgap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers. ECS Trans., 11 (7), pp. 259-267.
    Baumgart, H., Letavic, T. J., De Wolf, I., Tsou, L., Maes, H., and Egloff, R. (1995). Analysis of Process-Induced Stresses in Lateral SOI Trench Isolation Structures for High Voltage Devices in Bonded SOI. ECS Proceedings , The Electrochemical Society, 95 (7), pp. 440-454.
    Egloff, R., Letavic, T. J., Merchant, S., Greenberg, B., and Baumgart, H. (1995). Evaluation of Strain Sources in Bond and Etch-back Silicon-on-Insulator. ECS Proceedings , The Electrochemical Society, 95 (7), pp. 236-251.
    Egloff, R., Letavic, T., Greenberg, B., and Baumgart, H. (1995). Evaluation of Strain Sources in Bond and Etchback Silicon-on-Insulator. Philips Journal of Research, 49 (1/2), pp. 125-138.
    Baumgart, H., Letavic, T., and Egloff, R. (1995). Evaluation of Wafer Bonding and Etch Back for SOI Technology. Philips Journal of Research, 49 (1/2), pp. 91-124.
    Maszara, W., Jiang, B., Yamada, A., Rozgonyi, G., Baumgart, H., and de Kock, A. R. (1991). Role of Surface Morphology in Wafer Bonding. J. Appl. Phys., 69 (1), pp. 257.
    Baumgart, H., and van Ommen, A. (1989). Current Status of the Technology of Silicon Separated by Implantation of Oxygen ( SIMOX ). Materials Science and Engineering, B2 (1-3), pp. 111.
    Krumme, J., Doorman, V., Hansen, P., Baumgart, H., Petruzzello, J., and Viegers, M. A. (1989). Optical Recording Aspects of RF Sputtered Iron Garnet Films. J. Appl. Phys., 66(9), pp. 4393.
    Olego, D., and Baumgart, H. (1988). Raman Scattering Characterization of the Microscopic Structure of Semi-Insulating Polycrystalline Si ( SIPOS ) Films. J. Appl. Phys., 63 (8), pp. 2669.
    Olego, D., Baumgart, H., and Celler, G. (1988). Strains in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Raman Scattering Characterization. Appl. Phys. Lett., 52 (6), pp. 483.
    Theunissen, M. J., Baumgart, H., Haisma, J., Mulder, J. L., and Rutten, W. M. (1988). Substrate Damage Prevention and Simultaneous Zone-Melt Recrystallization in Stacked SOI Layers. J. Appl. Phys., 27 (10), pp. L 1938.
    Arnold, E., Baumgart, H., Khan, B., and Ramesh, S. (1987). Laser Beam-Induced Recrystallization of Silicon and its Application to Silicon-on-Insulator Technology. Philips Journal of Research, 42 (3), pp. 253.
    Landmann, U., Luedtke, W., Barnett, R., Cleveland, C., Ribarsky, M., Arnold, E., Ramesh, S., Baumgart, H., Martinez, A., and Khan, B. (1986). Faceting at the Silicon (100 ) Crystal Melt Interface: Theory and Experiment. Phys. Review Letters, 56 (2), pp. 155.
    Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., and Phillipp, F. (1983). SIMS Investigation of P-N Junction Quality in Ion Implanted CW Laser Annealed Silicon. Fresenius Zeitschrift fuer Analytische Chemie, 313 (3), pp. 303.
    Leamy, H., Chang, C., Baumgart, H., Lemons, R., and Cheng, J. (1982). Cellular Growth in Micro-Zone Melted Silicon. Materials Letters, 1, pp. 33.
    Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., and Phillipp, F. (1982). Electrical and Structural Properties of p-n Junctions in CW Laser Annealed Silicon. J. Appl. Phys., 53 (8), pp. 5904.
    Baumgart, H., Leamy, H., Celler, G., and Trimble, L. (1982). Grain Boundary Diffusion in Polycrystalline Silicon Films on SiO2. J. de Physique, Colloque C, Suppl. 10, 43 (C-1), pp. 363.
    Chang, S., Queisser, H., Baumgart, H., Hagen, W., and Hartmann, W. (1982). High Resolution Real Time X-Ray Topography of Dislocation Generation in Silicon. Philosophical Magazine A, 46 (6), pp. 1009.
    Merkle, K., Baumgart, H., Uebbing, R., and Phillipp, F. (1982). Picosecond Laser Pulse Irradiation of Crystalline Silicon. Appl. Phys. Lett., 40 (8), pp. 729.
    Celler, G., Trimble, L., Ng, K., Leamy, H., and Baumgart, H. (1982). Seeded Oscillatory Growth of Silicon over SiO2 by CW Laser Irradiation. Appl. Phys. Lett., 40 (12), pp. 1043.
    Maier, M., Bimberg, D., Baumgart, H., and Phillipp, F. (1982). SIMS Investigation of p-n Junction Quality in Ion Implanted CW Laser Annealed Silicon. Secondary Ion Mass Spectroscopy SIMS III, Springer Series in Chemical Physics, 19, pp. 336.
    Baumgart, H., Phillipp, F., Rozgonyi, G., and Gosele, U. (1981). Slip Dislocation Formation During CW Laser Annealing of Silicon. Appl. Phys. Lett., 38 (2), pp. 95.
    Baumgart, H., Markewitz, G., and Hartmann, W. (1980). A Novel High Temperature Tensile Stage for Live X-ray Topography. J. Appl. Cryst., 13, pp. 601.
    Baumgart, H., Rozgonyi, G., Uebbing, R., and Phillipp, F. (1980). Laser Annealing of Silicon: Strain and Perfection of Epitaxially Reconstructed Surfaces. J. Phys. Soc. Japan, 49 (A), pp. 1291.
    Uebbing, R., Wagner, P., Baumgart, H., and Queisser, H. (1980). Luminescence in Slipped and Dislocation-Free Laser Annealed Silicon. Appl. Phys. Letters, 37 (12), pp. 1078.
    Rozgonyi, G., and Baumgart, H. (1980). Time Dependence of the Nucleation of Slip Dislocations During Laser Annealing of Silicon. Journal de Physique, Suppl. 5, 41 (C4), pp. 85.
  • Books

    Baumgart, H. (2010). Semiconductor Wafer Bonding XI: Science, Technology and Applications. ECS Transactions, The Electrochemical Society.
    Baumgart, H. (2008). Semiconductor Wafer Bonding 10: Science, Technology and Applications. ECS Transactions, The Electrochemical Society.
    Baumgart, H. (2006). Semiconductor Wafer Bonding 9: Science, Technology and Applications. ECS Transactions,The Electrochemical Society.
    Baumgart, H. (2005). Semiconductor Wafer Bonding VIII: Science, Technology and Applications. The Electrochemical Society.
    Baumgart, H. (2003). Semiconductor Wafer Bonding VII: Science, Technology and Applications. The Electrochemical Society.
    Baumgart, H. (2002). Semiconductor Wafer Bonding VI: Science, Technology and Applications. The Electrochemical Society.
    Baumgart, H. (2001). Semiconductor Wafer Bonding V: Science, Technology and Applications. The Electrochemical Society.
    Baumgart, H. (1998). Semiconductor Wafer Bonding IV: Science, Technology and Applications. The Electrochemical Society.
    Baumgart, H. (1995). Semiconductor Wafer Bonding III: Physics and Applications. The Electrochemical Society.
    Baumgart, H. (1993). Semiconductor Wafer Bonding II: Science, Technology and Applications. The Electrochemical Society.
  • Conference Proceeding

    Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Electrical Characterization of ALD ZnO and HfO2 Thin Films. (pp. 281). ECS Transactions.
    Gu, D., Yalcin, S., Baumgart, H., Zian, S., Baysal, O., and Beskok, A. (2010). Electrophoretic Light Scattering for Surface Zeta Potential Measurement of ALD Metal Oxide Films. (pp. 37). ECS Transactions.
    Gu, D., Baumgart, H., Nauman, F., and Petzold, M. (2010). Finite Element Modeling and Raman Study of Strain Distribution in Patterned Device Islands on Strained Silicon-on-Insulator (sSOI) Substrates. (pp. 529). ECS Transactions.
    Tapily, K., Gu, D., and Baumgart, H. (2010). Growth Mechanism of ALD ZnO Films Investigated by Physical Characterization. (pp. 355). ECS Transactions.
    Tapily, K., Moutanabbir, O., Abdullah, M., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Hydrogen Ion-Induced AlN Thin Layer Transfer: An Elastomechanical Study. (pp. 37). ECS Transactions.
    Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Investigation of Thermal Evolution of Implanted Hydrogen in GaN by Nanoindentation. (pp. 241). ECS Transactions.
    Tapily, K., Gu, D., Baumgart, H., Rigo, M., and Seo, J. (2010). Raman Spectroscopy of ZnO Thin Films by Atomic Layer Deposition. (pp. 117). ECS Transactions.
    Valente-Feliciano, A., Phillips, H., Reece, C., Spradlin, J., Zhao, X., Gu, D., Baumgart, H., Beringer, D., Lukaszew, R., Xiao, B., and Seo, K. (2010). RF and Structural Characterization of SRF thin Films.. Kyoto: Proceedings of 1st International Particle Accelerator Conference IPAC-2010.
    Gu, D., Tapily, K., Baumgart, H., and Elmustafa, A. (2010). Synthesis of NbN Thin Films for Superconducting Radiofrequency (SRF) Applications by Atomic Layer Deposition to Fabricate Superconductor-Insulator-Superconductor (S-I-S) Multilayer Structures. (pp. 203). ECS Transactions.
    Gu, D., Shrestha, P., Baumgart, H., Namkoong, G., and Abdel-Fattah, T. (2009). ALD Synthesis of Tube-in-Tube Nanostructures of Transition Metal Oxides by Template Replication. (pp. 191-198). ECS Transactions.
    Gu, D., Shrestha, P., Baumgart, H., and Namkoong, G. (2009). ALD Synthesis of Tube-in-Tube Nanostructures of Transition Metal Oxides by Template Replication. (pp. 191-198). ECS transactions.
    Zhu, X., Gu, D., Li, Q., Baumgart, H., Ioannou, D., Suehle, J., and Richter, C. (2009). Application of ALD high-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories. (pp. 473). ECS Transactions.
    Yu, L., Rozgonyi, G., Shrestha, P., Gu, D., and Baumgart, H. (2009). C-V and Deep Level Transient Spectroscopy (DLTS) of ALD HfO2 on s-Si/SiGe/Si: Effects of strained-Si Thickness and Surface Nitridation. (pp. 379). ECS Transactions.
    Gu, D., Zhu, M., Nauman, F., Petzold, M., and Baumgart, H. (2009). Experimental Raman Study and Finite Element Modeling of Strain Distribution in.. University Park, PA: 51st Electronic Materials Conference.
    Gu, D., Tapily, K., Yao, Y., Shrestha, P., and Baumgart, H. (2009). Low Temperature ZnO Growth for Nanotube Fabrication by Atomic Layer Deposition.. University Park, PA: 51st Electronic Materials Conference.
    Abdel-Fattah, T., Gu, D., Baumgart, H., Bajpai, R., and Zaghloul, M. (2009). Modeling and Characterization of ALD grown ZnO Nanotubes and their Integration into Sub-Micron Devices. (pp. 93). ECS Transactions.
    Zhua, X., Gu, D., Lia, Q., Laonnou, D. E., Baumgart, H., Suehle, J. S., and Richter, C. A. (2009). Nanowire Non-Volatile Memory with HfO2 Trapping Layers.. 1st IEEE International Memory Workshop (IMW), sponsored by IEEE Electron Devices Society.
    Abdel-Fattah, T., Gu, D., Baumgart, H., and Namkoong, G. (2009). Optimizing the Release of ALD Grown ZnO Nanotubes from Anodic Aluminum Oxide Templates. (pp. 191-198). ECS transactions.
    Tapily, K., Stegall, D., Gu, D., Baumgart, H., Namkoong, G., and Elmustafa, A. (2009). Physical Characterization of Thin Films Zinc Oxide Grown by ALD. (pp. 85-92). ECS transactions.
    Tapily, K., Stegall, D., Gu, D., Baumgart, H., Namkoong, G., and Elmustafa, A. (2009). Physical Characterization of Zinc Oxide Thin Films Grown by ALD. (pp. 85). ECS Trans..
    Valente-Feliciano, A., Phillips, H., Reece, C., Zhao, X., Gu, D., Baumgart, H., Lukaszew, R., Xiao, B., and Seo, K. (2009). RF and Structural Characterization of SRF Films. (pp. 431). Berlin: Proceedings of 14th International Conference on RF Superconductivity (SRF 2009).
    Foe, K., Boland, P., Namkoong, G., Gu, D., Baumgart, H., and Abdel-Fattah, T. (2009). Self-organized Crystal Growth of Nanostructured ZnO Morphologies by Hydrothermal Synthesis. (pp. 3). ECS Transactions.
    Zhu, X., Gu, D., Li, Q., Loannou, D., Baumgart, H., Suehle, J., and Richter, C. (2009). Silicon Nanowire Non-Volatile Memory with High-k Gate Dielectric Stack.. 16th Conference of Insulating Films on Semiconductors INFOS, Journal Microelectronics Engineering.
    Wu, A., Gu, D., and Baumgart, H. (2009). TEM Study of Niobium Surfaces Treated by Different Polishing Techniques. (pp. 300). Berlin: Proceedings of 14th International Conference on RF Superconductivity (SRF 2009).
    Tapily, K., Jakes, J., Stone, D., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (2008). Comparison of Nanomechanical Behavior of the Amorphous and Crystalline Phases of ALD HfO2. (pp. 269). ECS Transactions.
    Tapily, K., Baumgart, H., Gu, D., Elmustafa, A., Krause, M., and Petzold, M. (2008). Effect of Wafer Bonding and Layer Splitting on Nanomechanical Properties of standard and strained SOI Films. (pp. 337). ECS Transactions.
    Shrestha, P., Tapily, K., Gu, D., and Baumgart, H. (2008). Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates. (pp. 159). ECS Transactions.
    Gu, D., Baumgart, H., Zhu, M., and Celler, G. (2008). Strain Relaxation in Patterned Strained Silicon-on-Insulator (sSOI) by Raman Spectroscopy. (pp. 329). ECS Transactions.
    Gu, D., Baumgart, H., Bourdelle, K., Celler, G., and Elmustafa, A. (2008). Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology. (pp. 385). ECS Transactions.
    Merchant, S., Arnold, E., Baumgart, H., Egloff, R., Letavic, T., Mukherjee, S., and Pein, H. (1993). Dependence of Breakdown Voltage on Drift Length and Buried Oxide Thickness in SOI RESURF LDMOS Transistors. (pp. 144-128). 5th Int. Symp. on Power Semiconductor Devices & ICs, IEEE Electron Devices Society.
    Baumgart, H., Egloff, R., Arnold, E., Letavic, T., Merchant, S., Mukherjee, S., and Bhimnatwala, H. (1993). Measurement of Minority Carrier Diffusion Length and Lifetime in SOI Devices by Flying Spot Laser Scanner as a Function of Residual Misfit. (pp. 44). Palm Springs, CA: IEEE International SOI Conference.
    Baumgart, H., Steigmeier, E., Auderset, H., Abe, T., Letavic, T., Pinker, R., and Arnold, E. (1992). Light Scattering Topography Characterization of Bonded SOI Wafers. (pp. 375-385). ECS Proceedings, The Electrochemical Society.
    Pein, H., Arnold, E., Baumgart, H., Egloff, R., Letavic, T., Merchant, S., and Mukherjee, S. (1992). SOI High Voltage LDMOS and LIGBT Transistors with a Buried Diode and Surface P-Layer.. Ponte Vedra Beach, FL: IEEE International SOI Conference.
    Letavic, T., Baumgart, H., Pinker, R., Merchant, S., and Arnold, E. (1992). Thermomechanical Device Processing Issues in Bonded SOI Wafers. (pp. 397-413). ECS Proc. The Electrochemical Society.
    Merchant, S., Arnold, E., Baumgart, H., Mukherjee, S., Pein, H., and Pinker, R. (1991). High Breakdown-Voltage Devices in Ultra-Thin SOI. (pp. 150). Vail Valley, CO: IEEE International SOI Conference.
    Merchant, S., Arnold, E., Baumgart, H., Mukherjee, S., Pein, H., and Pinker, R. (1991). Realization of High Breakdown Voltage ( > 700 V ) in Thin SOI Devices. (pp. 31). 3rd Intl. Symp. on Power Semiconductor Devices & ICs, IEEE Electron Devices Society.
    Baumgart, H., Pinker, R., Kellawon, P., Steigmeier, E., and de Kock, A. R. (1990). Origin of Residual Defects in Bonding and Etch-Back Silicon-on-Insulator Technology. (pp. 236). ECS Proceedings, The Electrochemical Society.
    Baumgart, H., Pinker, R., Steigmeier, E., Auderset, H., and de Kock, A. R. (1989). Impact of Interface Preparation on Defect Generation During Wafer Bonding. (pp. 95). Stateline, Nevada: SOS/SOI Technology Conference.
    Weber, J., Baumgart, H., Petruzzello, J., and Celler, G. (1988). Photoluminescence Characterization of Thin SOI Films Produced by Oxygen Implantation. (pp. 117). Mat. Res. Soc. Symp. Proc..
    Ramesh, S., Martinez, A., Petruzzello, J., Baumgart, H., and Arnold, E. (1986). Addressing the Problems of Agglomeration, Surface Roughness and Crystal Imperfection in SOI Films. (pp. 45). Semiconductor-on-Insulator and Thin Film Transistor Technology, Materials Res. Soc. Symp. Proc..
    Arnold, E., Landmann, U., Ramesh, S., Luedtke, W., Barnett, R., Cleveland, C., Martinez, A., Baumgart, H., and Khan, B. (1986). Formation of Facets at the Solid-Melt Interface in Silicon. (pp. 21). Semiconductor-on-Insulator and Thin Film Transistor Technology, Mat. Res. Soc. Symp. Proc..
    Baumgart, H. (1986). Physical Properties of Silicon-on-Insulator Films Grown by Unseeded Laser-Induced Zone-Melting. (pp. 98). Boston: 169th Electrochemical Society Spring Meeting.
    Baumgart, H. (1986). Silicon-on-Insulator Technology by Crystallization on Quartz Substrates. (pp. 211). Advanced Processing and Characterization of Semiconductors III, Proc. of The Intl. Society of Optical Engineering, SPIE.
    Baumgart, H., Phillipp, F., Ramesh, S., Khan, B., Martinez, A., and Arnold, E. (1986). Twin Stabilized Planar Growth of SOI Films. (pp. 65). Semiconductor-on-Insulator and Thin Film Transistor Technology, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., and Phillipp, F. (1985). High Voltage Electron Microscopy Investigation of Subgrain Boundaries in Recrystallized Silicon-on-Insulator Structures. (pp. 593). Energy Beam Solid Interactions and Transient Thermal Processing, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., and Phillipp, F. (1985). Low Angle Grain Boundaries in Zone-Melting Grown Silicon. (pp. 89). Royal Microscopical Society Conference on Microscopy of Semiconducting Materials, Institute of Physics Conf..
    Baumgart, H., Frye, R., Phillipp, F., and Leamy, H. (1984). Dielectric Isolation Using Porous Silicon. (pp. 63). Comparison of Thin Film Transistor and SOI Technologies, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Arnold, E., Petruzzello, J., McGee, T., and Frommer, M. (1984). Structural Properties of Dielectric Layers Following CO2 Laser Irradiation of SOI Structure. (pp. 87). Comparison of Thin Film Transistors and SOI Technologies, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Celler, G., Lischner, D., McRobinson, and Sheng, T. (1983). Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing. (pp. 349). Elsevier North Holland: Laser Solid Interactions and Transient Thermal Processing of Materials, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Phillipp, F., and Celler, G. (1983). Defect Structure of Epitaxial Films Grown on Porous Silicon. (pp. 223). Microscopy of Semiconducting Materials, Inst. of Physics Conf..
    Baumgart, H., Phillipp, F., and Leamy, H. (1982). Defect Formation in CO2 Laser Annealed Silicon. (pp. 355). Elsevier North Holland: Laser Electron-Beam Interactions with Solids, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Leamy, H., Trimble, L., Doherty, C., and Celler, G. (1982). Diffusion of Arsenic and Phosphorus in Laser Processed Polycrystalline Silicon Thin Films. (pp. 311). Elsevier North Holland: Grain Boundaries in Semiconductors, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Frye, R., Trimble, L., Leamy, H., and Celler, G. (1982). Laser Processing of Porous Silicon. (pp. 609). Elsevier North Holland: Laser and Electron-Beam Interactions with Solids, Mat. Res. Soc. Symp. Proc..
    Merkle, K., Uebbing, R., Baumgart, H., and Phillipp, F. (1982). Picosecond Laser Pulse Induced Damage in Crystalline Silicon. (pp. 337). Elsevier North Holland: Laser and Electron-Beam Interactions with Solids, Mat. Res. Soc. Symp. Proc..
    Trimble, L., Ng, K., Celler, G., Baumgart, H., and Leamy, H. (1982). Seeded Growth of Silicon over SiO2 Substrates by Seeded CW Laser Irradiation. (pp. 505). Elsevier North Holland: Laser and Electron-Beam Interactions with Solids, Mat. Res. Soc. Symp. Proc..
    Rozgonyi, G., Baumgart, H., Phillipp, F., Uebbing, R., and Oppolzer, H. (1982). Structural Modifications of Amorphized Silicon Surfaces following Picosecond Laser Irradiation. (pp. 177). Elsevier North Holland: Laser and Electron-Beam Interactions with Solids, Mat. Res. Soc. Symp. Proc..
    Baumgart, H., Hildebrand, O., Phillipp, F., and Rozgonyi, G. (1981). Correlation between EBIC Contrast and Residual Defects in Slip-Free CW Laser Annealed Silicon. (pp. 127). Microscopy of Semiconducting Materials, Institute of Physics Conf. Series.
    Rozgonyi, G., Baumgart, H., and Phillipp, F. (1981). Dislocation Nucleation, Growth and Suppression during CW Laser Annealing of Silicon. (pp. 193). Elsevier North Holland: Laser and Electron-Beam Solid Interactions and Materials Processing, Mat. Res. Soc. Symp. Proc..
    Rozgonyi, G., Baumgart, H., Phillipp, F., Uebbing, R., and Oppolzer, H. (1981). Picosecond Laser Annealing of Silicon. (pp. 85). Institute of Physics Conference Series.
    Baumgart, H., Phillipp, F., Uebbing, R., and Rozgonyi, G. (1980). Rapid Quenching of Defects and Crystal Regrowth During Millisecond and Picosecond Laser Annealing of Silicon. (pp. Chap. 10 p. 509). Oiso: 11th Intl. Conf. on Defects and Radiation Effects in Semiconductors, Institute of Physics Conf..
  • Presentations

    Baumgart, H. (March 5, 2011). Nanotechnology Engineering utilizing Template Replication presented at Global Center of Excellence for Mechanical Systems Innovation (GMSI) of the University of Tokyo Tokyo, Japan.
    Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (2010). Sacrificial Spacer Technology for Free-Standing Multiple Nested ALD Nanotubes presented at 10th International Conference on Atomic Layer Deposition (ALD- 2010) Seoul, Korea.
    Baumgart, H. (2010). Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology presented at Baltic ALD 2010 Conference Hamburg, Germany.
    Valente-Feliciano, A., Phillips, H., Reece, C., Spradlin, J., Zhao, X., Gu, D., Baumgart, H., Beringer, D., Lukaszew, R., Xiao, B., and Seo, K. (2010). RF and Structural Characterization of SRF thin Films presented at First International Particle Accelerator Conference IPAC-2010 Kyoto, Japan.
    Tapily, K., Raj, A., Rozgonyi, G., Gu, D., and Baumgart, H. (2010). Hall Effect, DLTS and C-V Characterization of ALD HfO2 and ZnO Thin Films presented at Meet. Abstr.– Electrochem. Soc. 1002, 1552 (2010), the 8th International Symposium on High Dielectric Constant and other Dielectric Materials for Nanoelectronics and Photonics Las Vegas, NV.
    Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Thermal Behavior of the Mechanical Properties of GaN throughout Hydrogen-Induced Thin Film Layer Transfer presented at Meet. Abstr.– Electrochem. Soc. 1002, 1711 (2010), the 8th International Symposium on High Dielectric Constant and other Dielectric Materials for Nanoelectronics and Photonics Las Vegas, NV.
    Foe, K., Boland, P., Gu, D., Baumgart, H., Abdel-Fattah, T., Jeong, J., and Namkoong, G. (2010). Controlled Synthesis of ZnO Nanospheres using Hydrothermal Process presented at Meet. Abstr.–Electrochem. Soc. 1002, 102 (2010), Symposium A-1 General Topic Session Las Vegas, NV.
    Gu, D., Yalcin, S., Baumgart, H., Qian, S., Baysal, O., and Beskok, A. (2010). Electrophoretic Light Scattering for Surface Zeta Potential Measurement of ALD Metal Oxide Films presented at Meet. Abstr.–Electrochem. Soc. 1002, 1403 (2010), the 6th International Symposium on Atomic Layer Deposition Applications Las Vegas, NV.
    Shrestah, P., Gu, D., Tran, N., Tapily, K., Baumgart, H., and Namkoong, G. (2010). Investigation of Volmer-Weber Growth during the Nucleation Phase of ALD Platinum Thin Films and Template based Platinum Nanotubes presented at Meet. Abstr.–Electrochem. Soc. 1002, 1425 (2010), the 6th International Symposium on Atomic Layer Deposition Applications Las Vegas, NV.
    Tapily, K., Gu, D., Baumgart, H., Rigo, M., and Seo, J. (2010). Raman Spectroscopy of ZnO Thin Films by Atomic Layer Deposition presented at Meet. Abstr.–Electrochem. Soc. 1002, 1442 (2010), the 6th International Symposium on Atomic Layer Deposition Applications Las Vegas, NV.
    Tapily, K., Gu, D., and Baumgart, H. (2010). Frank van der Merwe Growth Mechanism of ALD ZnO studied by X-ray Diffraction presented at Meet. Abstr.–Electrochem. Soc. 1002, 1443 (2010), the 6th International Symposium on Atomic Layer Deposition Applications Las Vegas, NV.
    Gu, D., Tapily, K., Baumgart, H., and Namkoong, G. (2010). Synthesis of NbN Thin Films for Superconducting Radiofrequency (SRF) Applications by Atomic Layer Deposition to Fabricate Superconductor-Insulator-Superconductor (S-I-S) Multilayer Structures presented at Meet. Abstr.–Electrochem. Soc. 1002, 1444 (2010), the 6th International Symposium on Atomic Layer Deposition Applications Las Vegas, NV.
    Abdel-Fattah, T., Tapily, K., Gu, D., and Baumgart, H. (2010). Gold Functionalized ALD Grown ZnO Nanotubes presented at Meet. Abstr.–Electrochem. Soc. 1002, 1454 (2010), the International Symposium on Luminescence and Energy Efficiency Las Vegas, NV.
    Li, Q., Zhu, X., Gu, D., Baumgart, H., Suehle, J., and Richter, C. (2010). Capacitance and Interface State Density of Metal/HfO2/SiNW Capacitor Arrays presented at Meet. Abstr.–Electrochem. Soc. 1002, 1593 (2010), 4th International Symposium on Low-Dimensional Nanoscale Electronic and Photonic Devices Las Vegas, NV.
    Boland, P., Foe, K., Gu, D., Baumgart, H., Lee, K., and Namkoong, G. (2010). Estimation of Organic Tandem Solar Cell Power Conversion Efficiency via Optical Simulation Methods presented at Meet. Abstr.–Electrochem. Soc. 1002, 1667 (2010), the 6th International Symposium on Photovoltaics for the 21st Century Las Vegas, NV.
    Gu, D., Baumgart, H., nauman, F., and Petzold, M. (2010). Finite Element Modeling and Raman Study of Strain Distribution in Patterned Device Islands on Strained Silicon-on-Insulator (sSOI) Substrates presented at Meet. Abstr.–Electrochem. Soc. 1002, 1702 (2010), the 11th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications Las Vegas, NV.
    Tapily, K., Moutanabbir, O., Abdullah, M., Gu, D., Baumgart, H., and Elmustafa, A. (2010). Hydrogen Ion-Induced AlN Thin Layer Transfer: An Elastomechanical Study presented at Meet. Abstr.–Electrochem. Soc. 1002, 1754 (2010), the 11th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications Las Vegas, NV.
    Tapily, K., Gu, D., Baumgart, H., and Hunt, C. (2010). Y2O3 Red Phosphors for General Lighting Coated by Atomic Layer Deposition (ALD) of ZnO for Enhanced Efficacy, Lifetime, and Thermal Stability presented at Meet. Abstr.–Electrochem. Soc. 1002, 2310 (2010), the International Symposium on Luminescence and Energy Efficiency Las Vegas, NV.
    Baumgart, H. (September, 2010). Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology presented at Baltic ALD 2010 Conference Hamburg, Germany.
    Baumgart, H. (September, 2010). Atomic Layer Deposition for Nanotechnology Applications presented at Christian Albrecht University of Kiel, Institute of Materials Science, Nanoporous Materials Kiel, Germany.
    Baumgart, H. (September, 2010). Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology presented at Fraunhofer Institute of Materials Science Halle, Germany.
    Baumgart, H. (September, 2010). Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology presented at University of Konstanz, Institute of Experimental Physics, Photovoltaic Lab Konstanz, Germany.
    Gu, D., Xiao, B., Baumgart, H., Namkoong, G., and Crooks, R. (June, 2010). Atomic Layer Deposition of NbN Thin Films for Superconducting Radiofrequency (SRF) Cavities presented at 10th international conference on Atomic Layer Deposition Seoul.
    Gu, D., Tran, N., Tapily, K., Shrestha, P., Baumgart, H., and Namkoong, G. (June, 2010). Investigation of the Nucleation of ALD Platinum Films presented at 10th international conference on Atomic Layer Deposition Seoul.
    Gu, D., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (June, 2010). Sacrificial Spacer Technology for Free-Standing Multiple Nested ALD Nanotubes presented at 10th international conference on Atomic Layer Deposition Seoul.
    Baumgart, H. (May 27, 2010). Atomic Layer Deposition of Platinum thin Films and Template Based ALD Platinum Nanotubes presented at Micron Technology Inc. Manassas, Virginia.
    Shrestha, P., Gu, D., Baumgart, H., Namkoong, G., and Abdel-Fattah, T. (April, 2010). ALD Synthesis of Nested Coaxial Multiple Walled Nanotubes by Template Replication presented at American Vacuum Society Mid Atlantic Chapter Meeting Newport News, VA.
    Tapily, K., Tran, N., Gu, D., and Baumgart, H. (April, 2010). Atomic Layer Deposition (ALD) of Platinum Thin Films and Template based Pt Nanotubes presented at American Vacuum Society Mid Atlantic Chapter Meeting Newport News, VA.
    Baumgart, H. (February 4, 2010). Atomic Layer Deposition (ALD) of high-k Dielectric Films for Si Nanowire Nonvolatile Memory Devices and for Microfluidic Applications presented at Physics Colloquium Hampton, VA.
    Baumgart, H. (January 20, 2010). Understanding Strain and Strain Relaxation during Layer Transfer and Patterning in Wafer Bonding presented at 2nd International IEEE Workshop on Low Temperature Bonding for 3-D Integration; IEEE Components, Packaging & Manufacturing Technology Conference Tokyo, Japan.
    Baumgart, H. (January 20, 2010). Understanding Strain and Strain Relaxation during Layer Transfer and Patterning in Wafer Bonding presented at 2nd International IEEE Workshop on Low Temperature Bonding for 3-D Integration; IEEE Components, Packaging & Manufacturing Technology Conference University of Tokyo, Hongo, Tokyo, Japan.
    Baumgart, H. (January 18, 2010). Atomic Layer Deposition for Nanotechnology Fabrication with Applications in Microelectronics, Biosensors and Microfluidics presented at Global Center of Excellence for Mechanical Systems Innovation (GMSI) Tokyo, Japan.
    Baumgart, H. (January 18, 2010). Atomic Layer Deposition for Nanotechnology Fabrication with Applications in Microelectronics, Biosensors and Microfluidics presented at Global Center of Excellence for Mechanical Systems Innovation (GMSI) of the University of Tokyo Tokyo, Japan.
    Gu, D., Naumann, F., Petzold, M., Zhu, M., and Baumgart, H. (December, 2009). Investigation of Strain Relaxation in Patterned Strained Silicon-on-Insulator Structures by Raman Spectroscopy and Computer Simulation presented at IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, Maryland.
    Zhu, X., Li, Q., Ioannou, D., Gu, D., Baumgart, H., Bonevich, J., Suehle, J., and Richter, C. (December, 2009). Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness presented at IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, MD.
    Bajpai, R., Zaghloul, M., Gu, D., Baumgart, H., and Abdel-Fattah, T. (December, 2009). Synthesis and Assembly of ZnO Nanorods Grown by ALD for Biosensor Application presented at IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, MD.
    Gu, D., Tapily, K., Shrestha, P., and Baumgart, H. (December, 2009). Nanotube/Nanorods Fabrication of ZnO Using Atomic Layer Deposition and the Template Replication Method presented at IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, Maryland.
    Boland, p., Abdel-Fattah, T., Baumgart, H., and Namkoong, G. (December, 2009). Optimization of Active Layer Thickness in Planar Organic Solar Cells via Optical Simulation Methods presented at the IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, Maryland.
    Ndoye, C., Liu, T., Orlowski, M., Gu, D., Tran, N., and Baumgart, H. (December, 2009). Si Nanowire MOSFET with Gate-All-Around Electrode presented at the IEEE International Semiconductor Device Research Symposium (ISDRS 2009) College Park, Maryland.
    Zhu, X., Gu, D., Li, Q., Ioannou, D., Baumgart, H., Suehle, J., and Richter, C. (2009). Silicon Nanowire Non Volatile Memory with High-k Gate Dielectric Stack presented at Insulating Films on Semiconductors, INFOS 2009 Cambridge, UK .
    Baumgart, H. (November 24, 2009). Atomic Layer Deposition (ALD) for Gate Stack Engineering and for Microfluidics and Sensor Applications presented at Materials Science and Engineering Department North Carolina State University, Raleigh, North Carolina.
    Gu, D., Shrestha, P., Baumgart, H., Abdel-Fattah, T., and Namkoong, G. (October, 2009). ALD Synthesis of Tube-in-Tube Nanostructures of Transition Metal Oxides by Template Replication presented at Meet. Abstr. – Electrochem. Soc. 902, 2027 (2009), the 5th International Symposium on Atomic Layer Deposition Applications Vienna, Austria.
    Foe, K., Boland, P., Namkoong, G., Gu, D., Baumgart, H., and Abdel-Fattah, T. (October, 2009). Self-organized Crystal Growth of Nanostructured ZnO Morphologies by Hydrothermal Synthesis presented at Meet. Abstr. –Electrochem. Soc. 902, 122 (2009), Electrochemical Society Meeting Vienna, Austria.
    Abdel-Fattah, T., Gu, D., Baumgart, H., and Namkoong, G. (October, 2009). Optimizing the Release of ALD Transition Metal Oxide Nanotubes from Anodic Aluminum Oxide Templates presented at Meet. Abstr. –Electrochem. Soc. 902, 2046 (2009), 5th International Symposium on Atomic Layer Deposition Applications Vienna, Austria.
    Yu, L., Rozgonyi, G., Shrestha, P., Gu, D., and Baumgart, H. (October, 2009). C-V and Deep Level Transient Spectroscopy (DLTS) of ALD HfO2 on s-Si/SiGe/Si: Effects of strained-Si Thickness and Surface Nitridation presented at Meet. Abstr. –Electrochem. Soc. 902, 2144 (2009), High Dielectric Constant Materials and Gate Stacks 7 Symposium Vienna, Austria.
    Zhu, X., Gu, D., Li, Q., Baumgart, H., Ioannou, D., Suehle, J., and Richter, C. (October, 2009). Application of ALD high-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories presented at Meet. Abstr. –Electrochem. Soc. 902, 2154 (2009), High Dielectric Constant Materials and Gate Stacks 7 Symposium Vienna, Austria.
    Abdel-Fattah, T., Gu, D., Baumgart, H., Bajpai, R., and Zaghloul, M. (October, 2009). Modeling and Characterization of ALD grown ZnO Nanotubes and their Integration into Sub-Micron MEMS Devices presented at Meet. Abstr.–Electrochem. Soc. 902, 2019 (2009), the 5th International Symposium on Atomic Layer Deposition Applications Vienna, Austria.
    Tapily, K., Gu, D., Baumgart, H., Namkoong, G., and Elmustafa, A. (October, 2009). Meet. Abstr.–Electrochem. Soc. 902, 2018 (2009), the 5th International Symposium on Atomic Layer Deposition Applications presented at Physical Characterization of Zinc Oxide Thin Films Grown by ALD Vienna, Austria.
    Baumgart, H. (October 1, 2009). Atomic Layer Deposition (ALD) of high-k Dielectric Films for Gate Stack Engineering and for Microfluidic Applications presented at Swiss Federal Institute of Technology Zurich, Switzerland.
    Valente-Feliciano, A., Phillips, H., Reece, C., Zhaoe, X., Gu, D., Baumgart, H., Lukaszew, R., Xiao, B., and Seo, K. (September, 2009). RF and Structural Characterization of SRF Films presented at 14th International Conference on RF Superconductivity (SRF 2009) Berlin, Germany.
    Wu, A., Gu, D., and Baumgart, H. (September, 2009). TEM Study of Niobium Surfaces Treated by Different Polishing Techniques presented at 14th International Conference on RF Superconductivity (SRF 2009) Berlin, Germany.
    Baumgart, H. (August 21, 2009). Synthesis of Nested Coaxial Nanotubes by ALD for Microfluidics and Sensor Applications presented at Center for Nanoscale Science & Technology of the National Institute of Standards and Technology (NIST) of the United States Department of Commerce Gaithersburg, Maryland.
    Gu, D., Yalcin, S., Baumgart, H., Qian, S., Baysal, O., and Beskok, A. (July, 2009). Zeta Potentials of ALD Metal Oxide Films for Microfluidic Applications presented at American Vacuum Society (AVS) 9th International Conference on Atomic Layer Deposition ( ALD 2009) Monterey, California.
    Tapily, K., Stegall, D., Gu, D., Baumgart, H., Namkoong, G., and Elmustafa, A. (July, 2009). Structural and Nanomechanical Characterization of ALD ZnO presented at American Vacuum Society (AVS) 9th International Conference on Atomic Layer Deposition (ALD 2009) Monterey, California.
    Baumgart, H. (July 8, 2009). Fabrication of Si Nanowire Nonvolatile Memory Cells and Nanotemplate based Electroosmotic Pumps by Atomic Layer Deposition (ALD) presented at Invited Summer Colloquium Darmstadt, Germany.
    Baumgart, H. (July 6, 2009). Applications of Atomic Layer Deposition (ALD) in Nanotechnology presented at Max-Planck Institute of Metals and Solid State Research Stuttgart, Germany.
    Gu, D., Zhu, M., Naumann, F., Petzold, M., and Baumgart, H. (June, 2009). Experimental Raman Study and Finite Element Modeling of Strain Distribution in Patterned Device Islands on Strained Silicon-on-Insulator (sSOI) Substrates presented at 51st Electronic Materials Conference (EMC), TMS University Park, Pennsylvania.
    Gu, D., Zhu, M., Nauman, F., Petzold, M., and Baumgart, H. (June, 2009). Experimental Raman Study and Finite Element Modeling of Strain Distribution in presented at 51st Electronic Materials Conference, TMS University Park, PA.
    Gu, D., Tapily, K., Yao Yao, Shrestha, P., and Baumgart, H. (June, 2009). Low Temperature ZnO Growth for Nanotube Fabrication by Atomic Layer Deposition presented at 51st Electronic Materials Conference, TMS University Park, PA.
    Zhu, X., Gu, D., Li, Q., Loannou, D., Baumgart, H., Suehle, J., and Richter, C. (June 29, 2009). Silicon Nanowire Non-Volatile Memory with High-k Gate Dielectric Stack presented at 16th Conference of Insulating Films on Semiconductors INFOS Cambridge, UK.
    Zhua, X., Gu, D., Lia, Q., Loannou, D. E., Baumgart, H., Suehle, J. S., and Richter, C. A. (May, 2009). Nanowire Non-Volatile Memory with HfO2 Trapping Layers presented at 1st IEEE International Memory Workshop (IMW), sponsored by IEEE Electron Devices Society Monterey, California.
    Baumgart, H. (May 18, 2009). Thin Film, Nanotechnology and Sensor Development at Old Dominion University’s Applied Research Center at Jefferson National Accelerator Facility presented at Invited Science Seminar Manassas, Virginia.
    Tapily, K., and Baumgart, H. (April, 2009). Characterization of ALD grown ZnO presented at American Vacuum Society Mid Atlantic Chapter Meeting Newport News, VA.
    Shrestha, P., Ndoye, C., Anderson, W., Elliott, D., Thomas, J., Baumgart, H., and Gu, D. (April, 2009). Electrical Properties of MOS Capacitors with High-k Dielectric HfO2 Gate Insulator Using ALD presented at American Vacuum Society Mid Atlantic Chapter Meeting Newport News, VA.
    Tapily, K., Baumgart, H., Gu, D., Elmustafa, A., Krause, M., and Petzold, M. (October, 2008). Effect of Wafer Bonding and Layer Splitting on Nanomechanical Properties of standard and strained SOI Films presented at 10th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Gu, D., Baumgart, H., Zhu, M., and Celler, G. (October, 2008). Strain Relaxation in Patterned Strained Silicon-on-Insulator (sSOI) by Raman Spectroscopy presented at 10th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Gu, D., Baumgart, H., Bourdelle, K., Celler, G., and Elmustafa, A. (October, 2008). Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology presented at 10th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Tapily, K., Jakes, J., Stone, D., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (October, 2008). Comparison of Nanomechanical Behavior of the Amorphous and Crystalline Phases of ALD HfO2 presented at 4th International Symposium on Atomic Layer Deposition Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Shrestha, P., Tapily, K., Gu, D., and Baumgart, H. (October, 2008). Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially Grown on Si0.8Ge0.2/ Si Substrates presented at 4th International Symposium on Atomic Layer Deposition Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Abdel-Fattah, T., Gu, D., Baumgart, H., and Namkoong, G. (October, 2008). Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template Method presented at 4th International Symposium on Atomic Layer Deposition Applications, The Electrochemical Society Fall Meeting Honolulu, Hawaii.
    Thitsa, M., Baumgart, H., Gu, D., and Albin, S. (October, 2008). Enhanced Photonic Band Gap and Defect Structure of Diamond Based Photonic Crystals using ALD Hafnium Oxide Coating presented at Meet. Abstr. – Electrochem. Soc. 802, 1905 (2008), published at the 4th International Symposium on Atomic Layer Deposition Applications, 214th Electrochemical Society Meeting Honolulu, Hawaii.
    Baumgart, H. (July 22, 2008). Review of Atomic Layer Deposition (ALD) for Superconducting RF Applications presented at 3rd International Workshop on Thin Films applied to Superconducting RF and new Ideas for pushing the Limits of RF Superconductivity, Thomas Jefferson Labs Newport News, Virginia.
    Baumgart, H. (June 26, 2008). Application of Atomic Layer Deposition for Gate Stack Engineering on strained Silicon-on-Insulator (sSOI) and Germanium-on-Insulator (GeOI) Technology Platform for future High Performance CMOS Devices presented at Micron Technology R&D management Charlottesville, VA.
    Baumgart, H. (November, 2007). Strain Engineered Silicon-on-Insulator (sSOI) Technology by Wafer Bonding and Layer Transfer presented at 1st International IEEE Workshop on Low Temperature Bonding for 3-D Integration; IEEE Components, Packaging & Manufacturing Technology Conference University of Tokyo, Hongo, Tokyo, Japan.
    Baumgart, H. (November, 2007). Strain Engineered Silicon-on-Insulator (sSOI) Technology by Wafer Bonding and Layer Transfer presented at 1st International IEEE Workshop on Low Temperature Bonding for 3-D Integration; IEEE Components, Packaging & Manufacturing Technology Conference University of Tokyo, Hongo, Tokyo, Japan.
    Gu, D., Tapily, K., Shrestha, P., Celler, G., and Baumgart, H. (October, 2007). Experimental Study of Atomic Layer Deposition (ALD) HfO2 Deposited on Strained Silicon-on-Insulator (sSOI) & extra strained (xsSOI) and SOI presented at 3rd International Symposium on Atomic Layer Deposition Applications, Electrochemical Society Fall Meeting Washington D.C..
    Thitsa, M., Gu, D., Baumgart, H., and Albin, S. (October, 2007). Tuning the absolute Bandgap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers presented at 3rd International Symposium on Atomic Layer Deposition Applications, Electrochemical Society Fall Meeting Washington D.C..
    Tapily, K., Jakes, J., Stone, D., Shrestha, P., Gu, D., Baumgart, H., and Elmustafa, A. (October, 2007). Nanomechanical Properties of High-k Dielectrics Grown by Atomic Layer Deposition presented at 3rd International Symposium on Atomic Layer Deposition Applications,, Electrochemical Society Fall Meeting Washington D.C..
    Jakes, J., Stone, D., Tapily, K., Baumgart, H., Celler, G., and Elmustafa, A. (October, 2007). Nanoindentation Study of Silicon-on-Insulator (SOI) and Strained (sSOI) Multilayer Composite Films presented at American Vacuum Society 54th International Symposium & Exhibition Seattle, Washington.
    Miller, N., Tapily, K., Baumgart, H., Elmustafa, A., Celler, G., and Brunier, F. (April, 2007). Nanomechanical Properties of Strained Silicon-on-Insulator (sSOI) Films Epitaxially grown on Si1-xGex and Layer Transferred by Wafer Bonding presented at Symposium HH:. Surface and Interfacial Nanomechanics, Materials Research Society Spring Meeting San Francisco, California.
    Baumgart, H. (July 12, 2006). Thin Film Materials Challenges in Nanoelectronic Technology presented at 6th Fraunhofer Colloquium, Fraunhofer Institute – Center for Nanoelectronic Technologies CNT Dresden, Germany.
    Baumgart, H. (July 12, 2006). Thin Film Materials Challenges in Nanoelectronic Technology presented at 6th Fraunhofer Colloquium, Fraunhofer Institute – Center for Nanoelectronic Technologies CNT Dresden, Germany.
    Baumgart, H. (March, 2005). Technology Development TechXpress and TDRAM for Leading Edge CMOS Characterization presented at First Silicon Malaysia Sdn. Bhd Sarawak, Malaysia.
    Baumgart, H. (February, 2005). Introduction to TDROM, TDAnalog and TestChip Analysis for Random Failure Mode Detection and Yield Improvement presented at Silterra Malaysia SDN. BHD., Kulim Hi-Tech Park Kedah, Malaysia.
    Baumgart, H. (January 14, 2005). Challenges to BEOL Contact Integration and Yield Optimization for High Performance CMOS Logic Platform Development at the 90nm and 65nm Technology Nodes presented at Old Dominion University Norfolk, Virginia.
    Baumgart, H. (April 9, 2004). Process Control and Yield Enhancement for BEOL and Contact Module at 130nm and 90nm Technology Node presented at National Semiconductor Portland, Maine.
    Baumgart, H. (March 22, 2004). Voltage Contrast Inspection in BEOL Yield Enhancement Module Integration for CMOS Logic Platform Development presented at Mosel-Vitelic Corp San Jose, California.
    Baumgart, H. (March 12, 2004). Contact Module Process Recovery Case Study for 130nm CMOS Logic with Copper Dual Damascene Backend presented at University of California Davis Davis, California.
    Baumgart, H. (January, 2004). Voltage Contrast Inspection in BEOL Yield Enhancement Module Integration for CMOS Logic Platform Development presented at HPL Technologies ( Heuristic Physics Labs) Austin, Texas.
    Baumgart, H. (October 7, 2003). Reduction of Yield Losses due to Cu Puddle Shorts by Conditioning the Surface of Low-K presented at Infineon Technologies SC 300 Dresden, Germany.
    Baumgart, H. (May, 2003). Containment of Systematic Yield Detractors of the BEOL Module of Motorola’s Flagship SOI Technology HiP7 HP SOI presented at ST Microelectronics-Philips-Motorola 300mm Research Alliance Crolles 2 Grenoble - Crolles, France.
    Singhal, A., Sparks, T., Strozewski, K., Huang, F., Parihar, S., Schmidt, J., Boeck, B., Fretwell, J., Yeap, G., Sheth, V., Veeraghavan, S., Melnick, B., and Baumgart, H. (April, 2003). A Novel Approach to Contact Integration at 90 nm and Beyond presented at ULSI Process Integration III Symposium, Electrochemical Society Spring Meeting Paris, France.
    Baumgart, H. (February, 1997). Device Physics and Technology of LDMOS Devices in SOI Technology presented at Max-Planck Institute of Microstructure Physics Halle, Germany.
    Baumgart, H. (February, 1997). High Voltage LDMOS Process Development in SOI Technology for Lighting Electronics Applications presented at Siemens Munich, Germany.
    Baumgart, H., Letavic, T., De Wolf, I., Tsou, L., Maes, H., and Egloff, R. (May, 1995). Analysis of Process-Induced Stresses in Lateral SOI Trench Isolation Structures for High Voltage Devices in Bonded SOI presented at The Electrochemical Society Spring Meeting Reno, Nevada.
    Egloff, R., Letavic, T., Merchant, S., Greenberg, B., and Baumgart, H. (May, 1995). Strain Sources in Bond and Etch-back Silicon-on-Insulator presented at The Electrochemical Society Spring Meeting Reno, Nevada.
    Baumgart, H. (October 14, 1994). A Novel High Voltage LDMOS Process in SOI Technology presented at Siemens USA East Fishkill, New York.
    Baumgart, H. (March 25, 1994). Advances in Silicon-on-Insulator ( SOI ) Technology presented at Physics Seminar State University of New York Albany, New York.
    Baumgart, H., Egloff, R., Arnold, E., Letavic, T., Merchant, S., Mukherjee, S., and Bhimnatwala, H. (October, 1993). Measurement of Minority Carrier Diffusion Length and Lifetime in SOI Devices by Flying Spot Laser Scanner as a Function of Residual Misfit presented at 1993 IEEE International SOI Conference Palm Springs, California.
    Pein, H., Arnold, E., Baumgart, H., Egloff, R., Letavic, T., Merchant, S., and Mukherjee, S. (October, 1992). SOI High Voltage LDMOS and LIGBT Transistors with a Buried Diode and Surface P-Layer presented at 1992 IEEE International SOI Conference Ponte Vedra Beach, Florida.
    Merchant, S., Arnold, E., Baumgart, H., Mukherjee, S., Pein, H., and Pinker, R. (October, 1991). High Breakdown Voltage Devices in Ultra-Thin SOI presented at IEEE International SOI Conference Vail Valley, Colorado.
    Letavic, T., and Baumgart, H. (May, 1991). Thermomechanical Device Processing Issues in Bonded SOI Wafers presented at 1st Intl. Symposium on Semiconductor Wafer Bonding Science, Technology and Applications, The Electrochemical Society Spring Meeting Phoenix, Arizona.
    Letavic, T., and Baumgart, H. (May, 1991). Thermomechanical Device Processing Issues in Bonded SOI Wafers presented at 1st Intl. Symposium on Semiconductor Wafer Bonding Science, Technology and Applications, The Electrochemical Society Spring Meeting Phoenix, Arizona.
    Baumgart, H. (October 31, 1990). Materials Issues in SIMOX Technology presented at Duke University Materials Science Seminar Durham, North Carolina.
    Baumgart, H., Pinker, R., Kellawon, P., Steigmeier, E., and de Kock, A. (May, 1990). Origin of Residual Defects in Bonding and Etch-Back Silicon-on-Insulator Technology presented at 4th Intl. Symposium on Silicon-on-Insulator Technology and Devices, Electrochemical Society Spring Meeting Montreal, Canada.
    Steigmeier, E., Auderset, H., and Baumgart, H. (April, 1990). Characterization of Silicon-on-Insulator ( SOI ) Materials by Light Scattering Topography presented at 10th Conference of the Condensed Matter Division, European Physical Society Meeting Lisbon, Portugal.
    Baumgart, H. (1989). Advances in Silicon-on-Insulator Thin Film Fabrication by High Dose Oxygen Implantation (SIMOX ) presented at Philips Laboratories Briarcliff Manor, New York .
    Baumgart, H., Pinker, R., Steigmeier, E., Auderset, H., and de Kock, A. (October, 1989). Impact of Interface Preparation of Defect Generation During Wafer Bonding presented at IEEE SOS/ SOI Technology Conference Stateline, Nevada.
    Theunissen, M., Goemans, A., de Kock, A., Geijselaers, M., and Baumgart, H. (October, 1989). Reassessment of Defect Models in Graphite Strip Heater Zone-Melt Recrystallized Material by Non-Destructive Thin Film Diagnostics presented at IEEE SOS/ SOI Technology Conference Stateline, Nevada.
    Baumgart, H. (October, 1989). X-ray Topographic Analysis for Monitoring of Growth Defects in Graphite Strip Heater Zone-Melt Recrystallized Silicon Films on Insulating Substrates presented at Signetics Corporation Sunnyvale, California.
    Baumgart, H. (June, 1989). X-ray Topographic Analysis of State-of-the-Art Zone-Melt Recrystallized Material presented at Kopin Corporation Taunton, Massachusetts.
    Baumgart, H. (May, 1989). Monitoring of Growth Defects in Graphite Strip Heater Zone-Melt Recrystallized Silicon Films presented at Allied Signals Aerospace Technology Center Columbia, Maryland.
    Krumme, J., Doorman, V., Hansen, P., Baumgart, H., Petruzzello, J., and Viegers, M. (April, 1989). Optical Recording Aspects of rf Magnetron Sputtered Iron Garnet Films presented at Intl. Conference on Metallurgical Coatings San Diego, California.
    Baumgart, H., and van Ommen, A. (October, 1988). Composition and Microstructure of Low Dislocation Content SIMOX presented at IEEE SOS/ SOI Technology Workshop St. Simmons Island, Georgia.
    Baumgart, H., Theunissen, M., and Geijselaers, M. (October, 1988). Defect Analysis of SOI Structures Made by CO2 Laser Zone-Melt Recrystallization presented at SOS/ SOI Technology Workshop St. Simons Island.
    Baumgart, H. (June, 1988). Current Status of the Technology of Silicon Separated by Implantation of Oxygen (SIMOX ) presented at European Materials Research Society Meeting, Symposium C: “ Deep Implants: Fundamentals and Applications” Strasbourg, France.
    Baumgart, H. (June, 1988). Current Status of the Technology of Silicon Separated by Implantation of Oxygen (SIMOX ) presented at European Materials Research Society Meeting, Symposium C: “ Deep Implants: Fundamentals and Applications” Strasbourg, France.
    Baumgart, H. (May, 1988). SIMOX Technology and Silicon Direct Wafer Bonding for SOI Applications presented at Microelectronics Institute Stuttgart Stuttgart, Germany.
    Baumgart, H. (April, 1988). Materials Advances in Silicon-on-Insulator ( SOI ) Technology by Laser-Induced Zone-Melting Recrystallization presented at Siemens Central Research Laboratories Munich, Germany.
    Baumgart, H. (April, 1988). Ion Beam Synthesis of Buried SiO2 Layers for Silicon-on-Insulator ( SOI ) Film Fabrication presented at Wacker Chemitronic Laboratories Burghausen, Germany.
    Theunissen, M., Haisma, J., Baumgart, H., Widdershoven, F., and Mulder, J. (March, 1988). Local Defect-Free Monocrystalline SOI Made by CO2 Laser Melting at Low Substrate presented at 1 st European SOI Workshop: From Materials to Devices Meylan, France.
    Baumgart, H., Wolters, D., van Duynhoven, A., and Petruzzello, J. (March, 1988). Influences of Very High Temperature Annealing of Physical and Dielectric Properties of Implanted Buried Oxide Layers presented at 1st European SOI Workshop: From Materials to Devices Meylan, France.
    Baumgart, H. (February, 1988). Physical Properties of Silicon-on-Insulator ( SOI ) Films Grown by Unseeded Laser Induced Zone-Melting presented at Max Planck Institute of Solid State Research Stuttgart, Germany.
    Arnold, E., and Baumgart, H. (October, 1987). Interfacial and Dielectric Properties of SIMOX and Zone-Melting Recrystallized SOI Buried Oxides presented at 1987 SOS/ SOI Technology Workshop Durango, Colorado.
    Baumgart, H. (September, 1987). Current Zone-Melt Recrystallization Research at Philips Labs in Briarcliff Manor presented at Philips Central Research Laboratories Eindhoven, The Netherlands.
    Olego, D., and Baumgart, H. (March, 1987). Raman Scattering Characterization of Semi-Insulating Polycrystalline Silicon presented at 1987 American Physical Society Spring Meeting New York, City.
    Baumgart, H., Weber, J., Pandya, R., and Marinez, A. (March, 1987). Structural and Photoluminescent Properties of Subboundaries in Zone-Melt Recrystallized Silicon-on-Insulator ( SOI ) Films presented at 1987 American Physical Society Spring Meeting New York City.
    Baumgart, H., Weber, J., and Pandya, R. (October, 1986). Radiative Recombination in Laser Zone-Melt Recrystallized SOI Films presented at 1986 IEEE SOS/ SOI Technology Workshop Captiva Island, Florida.
    Baumgart, H. (May, 1986). Physical Properties of Silicon-on-Insulator Films Grown by Unseeded Laser-Induced Zone-Melting presented at 169th Meeting of The Electrochemical Society, Symposium on Silicon-on-Insulator Boston, Massachusetts.
    Baumgart, H. (May, 1986). Physical Properties of Silicon-on-Insulator Films Grown by Unseeded Laser-Induced Zone-Melting presented at 169th Meting of The Electrochemical Society, Symposium on Silicon-on-Insulator Boston, Massachusetts.
    Landmann, U., Luedtke, W., Barnett, R., Cleveland, C., Arnold, E., Ramesh, S., Baumgart, H., and Martinez, A. (April, 1986). Faceting at the Silicon ( 100 ) Crystal Melt Interface presented at 1986 American Physical Society Spring Meeting Las Vegas, Nevada.
    Baumgart, H. (February, 1986). Defect Formation during Zone-Melting Recrystallization of Silicon-on-Insulator Films presented at Philips Laboratories Briarcliff Manor, New York.
    Baumgart, H. (January, 1986). Silicon-on-Insulator Technology by Crystallization on Quartz Substrates presented at The Intl. Society for Optical Engineering (SPIE ), Symposium on Advanced Processing and Characterization of Semiconductors Los Angeles, California.
    Baumgart, H. (January, 1986). Silicon-on-Insulator Technology by Crystallization on Quartz Substrates presented at The Intl. Society for Optical Engineering (SPIE ), Symposium on Advanced Processing and Characterization of Semiconductors Los Angeles, California.
    Baumgart, H., Phillipp, F., Martinez, A., and Arnold, E. (October, 1985). The Microstructure of Laser Processed Silicon-on-Insulator Films presented at 1985 IEEE SOS/ SOI Technology Workshop Park City, Utah.
    Baumgart, H., Phillipp, F., Martinez, A., and Arnold, E. (July, 1985). The Mechanism of Line Defect Nucleation in Zone-Melting Grown Silicon Films on SiO2 presented at 1985 Gordon Conference on Defects and Interfaces in Semiconductors Plymouth, New Hampshire.
    Baumgart, H. (April, 1985). Silicon-on-Insulator Technology for Thin Film Transistors presented at Philips Research Laboratories Hamburg, Germany.
    Baumgart, H. (April, 1985). Silicon-on-Insulator Technology for Thin Film Transistors presented at Technical University of Hamburg-Harburg Hamburg, Germany.
    Baumgart, H. (March, 1985). Laser Recrystallized Silicon Films on Insulators for Large Area Devices presented at Philips Research Laboratories Redhill, England.
    Baumgart, H. (March, 1985). Laser Assisted Zone-Melt Recrystallization of Si Films on SiO2 presented at Plessey Research Center Towcester, England.
    Baumgart, H. (September, 1984). Silicon Thin Film Growth on Amorphous Substrates presented at Centre National de Recherche Scientifique, Laboratoire de Physique des Solides Meudon ( Paris ), France.
    Baumgart, H. (September, 1984). Subgrain Boundaries in Zone-Melting Processed Silicon presented at Max Planck Institute of Solid State Research Stuttgart, Germany.
    Baumgart, H. (September, 1984). Silicon-on-Insulator Technology by Laser Induced Zone-Melting Recrystallization presented at Philips Central Research Laboratories Eindhoven, The Netherlands.
    Baumgart, H. (February, 1984). Silicon-on-Insulator ( SOI ) Technology for Thin Film Transistors presented at Signetics Corporation Sunnyvale, California.
    Baumgart, H. (February, 1984). Full Isolation by Porous Oxidized Silicon presented at Silicon-on-Insulator and Three Dimensional Integrated Circuits Workshop at the IEEE Intl. Solid State Circuits Conference San Francisco, California.
    Baumgart, H. (January, 1984). Full Isolation by Porous Oxidized Silicon presented at Silicon-on-Insulator and Three Dimensional Integrated Circuits Workshop at the IEEE Intl. Solid State Circuits Conference San Francisco, California.
    Baumgart, H. (June, 1982). The Application of Laser Processing for Silicon Thin Film Growth on Insulators presented at Brown Boveri Research Laboratories Baden, Switzerland.
    Baumgart, H., Doherty, C., and Leamy, H. (June, 1982). Application of CO2 Laser Irradiation to the Fabrication of Silicon-on-Insulator Structures presented at Electronic Materials Conference Fort Collins, Colorado.
    Baumgart, H. (May, 1982). Laser Annealing Studies of Semiconductors presented at INTEL Corporation Central Research Laboratories Santa Clara, California.
    Baumgart, H. (May, 1982). New Dielectric Isolation Techniques using Porous Silicon presented at North Carolina State University Raleigh, North Carolina.
    Baumgart, H. (May, 1982). Laser Processing of Polycrystalline Thin Silicon Films presented at Philips Laboratories Briarcliff Manor, New York.
    Baumgart, H. (February, 1982). Zone-Melt Recrystallization Techniques for Silicon-on-Insulator Structures presented at Hewlett Packard Laboratories Palo Alto, California.
    Rozgonyi, G., and Baumgart, H. (May, 1981). Picosecond Laser Annealing of Silicon presented at 4th Intl. Symposium on Silicon Material Science and Technology, The Electrochemical Society, Spring Meeting Minneapolis, Minnesota.
    Baumgart, H., and Phillipp, F. (May, 1981). Correlation between EBIC Contrast and Residual Defects in Slip-Free CW Laser Annealed Silicon presented at 4th Intl. Symposium on Silicon Material Science and Technology, The Electrochemical Society, Spring Meeting Minneapolis, Minnesota.
    Baumgart, H. (March, 1981). Picosecond Laser Pulse Annealing Phenomena presented at Spring Meeting of the German Physical Society Münster, Germany.
    Baumgart, H. (December, 1980). SEM and EBIC Investigations of Residual Defects in Laser Annealed and Solid Phase Epitaxially Reconstructed Silicon Surfaces presented at Centre National D’Etudes des Telecommunications Grenoble, France.
    Phillipp, F., Baumgart, H., Rozgonyi, G., Gosele, U., and Packeiser, G. (October, 1980). HVEM Investigations of CW Laser Annealed Silicon presented at Symposium for Electron Microscopy of Semiconductors, The Electrochemical Society, Fall Meeting Hollywood, Florida.
    Baumgart, H. (October, 1980). X-ray Topographic Analysis of the Perfection of Laser Annealed Silicon Layers presented at Symposium on X-ray Topography Berlin, W. Germany.
    Baumgart, H. (September, 1980). Laser Induced Radiation Damage during CW Laser Annealing of Disordered Silicon Layers presented at Hitachi Central Research Laboratories Tokyo, Japan.
    Baumgart, H. (August, 1980). Application of X-ray Topography for Semiconductor Materials Analysis presented at Semiconductor Institute of the Chinese Academy of Science Beijing, China.
    Baumgart, H. (August, 1980). Current Laser Annealing Research at the Max Planck Institute of Solid State Research in Stuttgart presented at Semiconductor Institute of the Chinese Academy of Science Beijing, China.
    Baumgart, H. (April, 1980). Dislocation Generation during CW Laser Annealing of Silicon presented at University of Catania, Catania Sicily, Italy.
    Baumgart, H., and Rozgonyi, G. (March, 1980). Laser Annealing Investigation on the Time Dependence of the Nucleation of Slip Dislocations in Silicon presented at Spring Meeting of the German Physical Society Freudenstadt, Germany.
  • 2002: Motorola Award:, Motorola
  • 2001: Infineon Technology: Special Recognition Award for Leadership of FMEA Team
  • 1989: Special Merit Award, Philips Research
  • 1985: Special Merit Award, Philips Research
  • 1984: President’s Making a Difference Award, Philips Research
  • 1978: Graduate Research Scholarship, Max-Planck Society, Stuttgart, Germany
  • 1975: Fulbright Scholarship, Purdue University, W. Lafayette, Indiana
  • Contracts, Grants and Sponsored Research

    Wolf, S.; Harriott, L.; Lu, J.; Baumgart, H.; Lukaszew, A. "Phase Transition Switches Based on the Electrically induced Metal-Semiconductor Transition in VO2" $280,000. November 1, 2010 - October 31, 2013
    Baumgart, H. "Nanoscale Crossbar Switch for High-Performance On-Chip Interconnect Architecture" $84,166. Federal. October 1, 2010 - September 30, 2013
    Namkoong, G.; Lee, K.; Baumgart, H.; Elsayed-Ali, H. "Ultrahigh-Efficiency Hybrid Organic-Inorganic Solar Cells using Nanorod-in-Nanotube Techniques" $91,000. Old Dominion University. January, 2010 - August, 2010
    Baumgart, H.; Crooks, R. "Multilayer ALD Films for Superconducting Radio Frequency Cavities" $31,211. Federal. July 1, 2009 - March 31, 2010
    Albin, S.; Dhali, S. K.; Baumgart, H.; Cooper, J. B.; Hao, J. Z. "Biological and Chemical Deployable Nanosensors for Homeland Security Applications based on Silicon-on-Insulator (SOI) Technology Platform" $75,000. January, 2007 - June, 2007
    Hao, J. Z.; Dhali, S. K.; Baumgart, H.; Cooper, J. B.; Albin, S. "Biological and Chemical Deployable Nanosensors for Homeland Security Applications based on Silicon-on-Insulator (SOI) Technology Platform " $75,000. January, 2007 - June, 2007
  • Intellectual Property

    A Silicon Quantum Dot Luminescent Display
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Haisma, J.
    A Silicon Quantum Dot Luminescent Display
    Patent/Copyright: Patent
    Inventors:
    Haisma, J.
    Baumgart, H.
    Method to Remove Existing Extended Defects caused by High Dose Oxygen Implantation Damage in thin SIMOX Films
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to Remove Existing Extended Defects caused by High Dose Oxygen Implantation Damage in thin SIMOX Films
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Contacting Wide Band Gap Quantum Wire Sized Porous Si by III-V Semiconductors or II-VI Semiconductors for LED Device Structures
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Mensz, P. M.
    Method for Contacting Wide Band Gap Quantum Wire Sized Porous Si by III-V Semiconductors or II-VI Semiconductors for LED Device Structures
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Mensz, P.
    Method for Controlled RF Plasma Beam Induced Zone-Melting Crystal Growth of thin Si Layers on Insulators and Rapid Thermal Annealing
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Kamp, R.
    de Meij, J. P.
    Schaper, H.
    Theunissen, M.
    Method for Controlled RF Plasma Beam Induced Zone-Melting Crystal Growth of thin Si Layers on Insulators and Rapid Thermal Annealing
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Kamp, R.
    Meij, J.
    Schaper, H.
    Theunissen, M.
    Method for Enhanced Low Temperature Oxidation of Polycrystalline or Single Crystal Silicon Films
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Enhanced Low Temperature Oxidation of Polycrystalline or Single Crystal Silicon Films
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Fabrication of L.E.D. Light Emitting Diode in the Visible Range in Quantum Wire Sized Porous Si
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Fabrication of L.E.D. Light Emitting Diode in the Visible Range in Quantum Wire Sized Porous Si
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Forming Electrostatic Field Induced Preferential Texture in Polycrystalline Silicon on Insulating Substrates
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Khan, B.
    Method for Forming Electrostatic Field Induced Preferential Texture in Polycrystalline Silicon on Insulating Substrates
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Khan, B.
    Method for Growth of Crystalline Garnet Films on arbitrary Amorphous Substrates for Magneto-Optic Applications
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Krumme, J. P.
    Method for Growth of Crystalline Garnet Films on arbitrary Amorphous Substrates for Magneto-Optic Applications
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Krumme, J.
    Method of Creating a Novel Silicon-on-Insulator Structure by Substituting electrically inactive Coherent Twins for electrically active and Detrimental Low Angle Grain Boundaries
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method of Creating a Novel Silicon-on-Insulator Structure by Substituting electrically inactive Coherent Twins for electrically active and Detrimental Low Angle Grain Boundaries
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to Prevent the Formation of Low Angle Grain Boundaries and other Lattice Defects during Energy Beam Induced Zone-Melting Recrystallization of Si Films on Insulator
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Martinez, A.
    Arnold, E.
    Method to Prevent the Formation of Low Angle Grain Boundaries and other Lattice Defects during Energy Beam Induced Zone-Melting Recrystallization of Si Films on Insulator
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Martinez, A.
    Arnold, E.
    MULTIPLE WALLED NESTED COAXIAL NANOSTRUCTURES
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to prevent Electrical Charge-up in Fluorescent Lighting Phosphors and Method to improve Heat Conduction by Providing a Conformal ALD Coating with an Electrically Conducting & Optically Transparent thin Film of ZnO
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Hunt, C.
    HIGH-EFFICIENCY HYBRID ORGANIC-INORGANIC SOLAR CELLS
    Patent/Copyright: Patent
    Inventors:
    Namkoong, G.
    Baumgart, H.
    Lee, K.
    Method to prevent electrical charge-up in Fluorescent Lighting Phosphors and Method to improve heat conduction by providing a conformal ALD coating with an electrically conducting & optically transparent thin film of ZnO
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to replace Inefficient Luminescent loosely packed Phosphor powders in Fluorescent Lamps with a solid Luminescent Phosphor Coating grown by Atomic Layer Deposition to increase the Luminous Efficacy
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for High Efficiencies Organic-Inorganic Solar Cells
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to Render Fabrics or any solid Surface Hydrophobic by Coatings with Nanostructured ALD Films for Use as Self Cleaning Materials
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    CARE SYSTEM AND BACTERICIDAL METHODS AND DEVICES
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    MULTIPLE WALLED NESTED COAXIAL NANOSTRUCTURES
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    WOUND CARE SYSTEM AND BACTERICIDAL METHODS AND DEVICES
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Method to Fabricate 2-D or 3-D Photonic Crystals by Using Atomic Layer Deposition (ALD) Film Coatings inside Walls of Pores of nanoporous templates
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method to Render Fabrics or any solid Surface Hydrophobic by Coatings with Nanostructured ALD Films for Use as Self Cleaning Materials
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method for Fabrication of a high Surface Area Oxygen Sensor utilizing ZrO2 ALD Coatings of Nano-channels in Nano-porous Templates
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Method for Fabrication of a high Surface Area Oxygen Sensor utilizing ZrO2 ALD Coatings of Nano-channels in Nano-porous Templates
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Method to Fabricate Bactericidal Wound Care Systems by Utilizing Atomic Layer Deposition (ALD) Coatings of TiO2 of all Individual Fibers in Wound Dressing Fill Material
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Method to Fabricate Bactericidal Wound Care Systems by Utilizing Atomic Layer Deposition (ALD) Coatings of TiO2 of all Individual Fibers in Wound Dressing Fill Material
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Method to Fabricate a three Electrode Active Zeta-Potential (ζ) Controlled Electroosmotic Pump in Nano-Porous Membranes using Atomic Layer Deposition (ALD)
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Beskok, A.
    Gu, D.
    Park, S.
    Abdel-Fattah, T.
    Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled Electroosmotic Pump in Nano-Porous Membranes using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Beskok, A.
    Gu, D.
    Park, S.
    Abdel-Fattah, T.
    Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled” Electroosmotic Pump in Nano-Porous Membranes using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Beskok, A.
    Gu, D.
    Park, S.
    Abdel-Fattah, T.
    Process for Fabrication of a two Terminal Passive Zeta-Potential (ζ) Controlled” Electroosmotic Pump in Nano-Porous Membranes using Atomic Layer Deposition (ALD) to coat the inside of the pores with suitable ALD metal oxides
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Beskok, A.
    Gu, D.
    Park, S.
    Abdel-Fattah, T.
    Method for Fabricating Enhanced Surface Broad-Spectrum Sensors and Detectors using multiple Wall Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Namkoong, G.
    Abdel-Fattah, T.
    Method for Fabricating Enhanced Surface Broad-Spectrum Sensors and Detectors using multiple Wall Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
    Patent/Copyright: Patent
    Inventors:
    Gu, D.
    Baumgart, H.
    Namkoong, G.
    Abdel-Fattah, T.
    Method for Forming multiple Walled Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Namkoong, G.
    Abdel-Fattah, T.
    Method for Forming multiple Walled Tube-in-Tube Nanostructures Grown by Atomic Layer Deposition (ALD) with the Template Replication Technique
    Patent/Copyright: Patent
    Inventors:
    Gu, D.
    Baumgart, H.
    Namkoong, G.
    Abdel-Fattah, T.
    Method for Solid State Shape Transformation of Nanostructures by release from Alumina Templates for the Manufacturing of perfectly Circular Shaped Multiple Walled Nanotubes from Arbitrary Shaped Nanostructures
    Patent/Copyright: Patent
    Inventors:
    Gu, D.
    Namkoong, G.
    Baumgart, H.
    Abdel-Fattah, T.
    Method for Solid State Shape Transformation of Nanostructures by release from Alumina Templates for the Manufacturing of perfectly Circular Shaped Multiple Walled Nanotubes from Arbitrary Shaped Nanostructures
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Gu, D.
    Namkoong, G.
    Abdel-Fattah, T.
    Multi-layered Tube-in-Tube Solar Cells
    Patent/Copyright: Patent
    Inventors:
    Namkoong, G.
    Baumgart, H.
    Gu, D.
    Abdel-Fattah, T.
    Multi-layered Tube-in-Tube Solar Cells
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Namkoong, G.
    Gu, D.
    Abdel-Fattah, T.
    Method for Nondestructive Measurement of Minority Carrier Diffusion Length and Minority Carrier Lifetime in Semiconductor Devices
    Patent/Copyright: Patent
    Method for Nondestructive Measurement of Dopant Concentrations in the Drift Region of Certain Semiconductor Devices
    Patent/Copyright: Patent
    Patent Nationality: United States
    Inventors:
    Baumgart, H.
    Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Measuring Method of Carrier Diffusion Length and Life Times of Minority Carriers in Semiconductor Device
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Non-Destructive Measuring Method for Dopant Impurity Concentration in Semiconductor Devices
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Process of Making Strain-Compensated Bonded Silicon-on-Insulator Material Free of Dislocations
    Patent/Copyright: Patent
    Patent Nationality: United States
    Inventors:
    Baumgart, H.
    Pinker, R.
    Arnold, E.
    Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
    Patent/Copyright: Patent
    Inventors:
    Baumgart, H.
    Method of Manufacturing a Silicon-on-Insulator Device using an Improved Encapsulation Layer
    Patent/Copyright: Patent
    Patent Nationality: Patent Cooperation Treaty
    Cooperation Treaty: Europe, Japan
    Inventors:
    Baumgart, H.
    Method of Preventing Encapsulation Layer Failure and Film Delamination during Micro-Zone Melting of Si
    Patent/Copyright: Patent
    Patent Nationality: United States
    Inventors:
    Baumgart, H.
    Martinez, A.
    Method for Producing single Crystal Layers on Insulators
    Patent/Copyright: Patent
    Patent Nationality: United States
    Inventors:
    Baumgart, H.
    Arnold, E.
    Rossi, B.
    Method for Producing single Crystal Layers on Insulators
    Patent/Copyright: Patent
    Inventors:
    Arnold, E.
    Baumgart, H.
    Rossi, B.
    Methods for Producing single Crystals in Insulators
    Patent/Copyright: Patent
    Inventors:
    Arnold, E.
    Baumgart, H.
    Rossi, B.
    Methods for Producing single Crystals in Insulators
    Patent/Copyright: Patent
    Patent Nationality: Patent Cooperation Treaty
    Cooperation Treaty: Europe, Japan
    Inventors:
    Baumgart, H.
    Arnold, E.
    Rossi, B.
    Methods for Producing single Crystals in Insulators
    Patent/Copyright: Patent
    Inventors:
    Arnold, E.
    Baumgart, H.
    Rossi, B.